Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Hyeon Deok Lee"'
Autor:
Jaihyung Won, Soyoung Yim, Hyeon-deok Lee, Dongjin Byun, Se Jun Park, Jong-Sik Choi, Seung Moo Lee, Jeongtae Kim
Publikováno v:
Thin Solid Films. 520:5284-5288
The effect of deposition and thermal annealing temperatures on the dry etch rate of a-C:H films was investigated to increase our fundamental understanding of the relationship between thermal annealing and dry etch rate and to obtain a low dry etch ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1987855c3432749b23c965c55fc5b07
https://doi.org/10.1016/j.tsf.2012.03.009
https://doi.org/10.1016/j.tsf.2012.03.009
Publikováno v:
Science China Information Sciences. 55:1019-1031
In early 2000, large domestic shipyards introduced shipbuilding 3D computer-aided design (CAD) to the hull production design process to define manufacturing and assembly information. The production design process accounts for most of the man-hours (M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b5346e1b3d5e686aa23041865128539
https://doi.org/10.1007/s11432-012-4581-z
https://doi.org/10.1007/s11432-012-4581-z
Autor:
Jaihyung Won, Dongjin Byun, Jong-Sik Choi, Yeonhong Jee, Seungmoo Lee, Samseok Jang, Hyeon-deok Lee
Publikováno v:
Thin Solid Films. 519:6737-6740
Amorphous carbon layers (ACL) were deposited on Si (100) wafers by plasma enhanced chemical vapor deposition (PECVD) by using 1-hexene (C 6 H 12 ) as a carbon source for dry etch hard mask of semiconductor devices manufacturing process. The depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe56f0bda934c70f308ebd226dadcf68
https://doi.org/10.1016/j.tsf.2011.01.405
https://doi.org/10.1016/j.tsf.2011.01.405
Autor:
Yeonhong Jee, Ji Hun Park, Hyeon-deok Lee, Jong-Sik Choi, Dongjin Byun, Seungmoo Lee, Jaihyung Won
Publikováno v:
Thin Solid Films. 519:6683-6687
Amorphous carbon layers (ACLs) were prepared by plasma enhanced chemical vapor deposition (PECVD) from 1-hexene (C6H12) and propylene (C3H6) as a carbon source at different temperatures for dry etch hard mask of semiconductor devices manufacturing pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e05bf403f773502f7d960515d7f9cc
https://doi.org/10.1016/j.tsf.2011.04.077
https://doi.org/10.1016/j.tsf.2011.04.077
Autor:
Chang Hun Lee, Ju Hee Noh, Hyeon Deok Lee, Young Sub You, Seok Jae Kim, Kong Soo Lee, Yong Woo Hyung, Gil Hwan Son, Daehan Yoo, Jae Jong Han, Yong Kwon Kim
Publikováno v:
Japanese Journal of Applied Physics. 45:L1193-L1196
Germanium (Ge) ion implantation was investigated for crystallinity enhancement during solid phase epitaxial (SPE) regrowth. Electron back-scatter diffraction (EBSD) measurement showed numerical increase of 19% of (100) signal, which might be due to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2547d8a425a81e40f7be241827c62f43
https://doi.org/10.1143/jjap.45.l1193
https://doi.org/10.1143/jjap.45.l1193
Publikováno v:
Journal of Electronic Materials. 28:L20-L23
We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12066e68473c24ab427cbf1c5891b1f6
https://doi.org/10.1007/s11664-999-0253-1
https://doi.org/10.1007/s11664-999-0253-1
Autor:
Jinhyung Lee, T.H. Rhee, W.H. Jang, H.C. Choi, Jaehee Cho, K. Han, Kim Jinho, Sung Yi, Chi Woo Kim, B.G. You, Stephen J. Pearton, Hyeon-deok Lee, E.J. Kim, Yong-Hyuk Lee
Publikováno v:
Thin Solid Films. 341:192-195
Fluorinated polyimides have attracted much attention as potential materials for optical waveguide fabrication due to their high thermal stability, humidity resistance, as well as low optical loss in the wavelength region of optical communications. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82f1ab0e8a0efb1d4905609eb79bc07b
https://doi.org/10.1016/s0040-6090(98)01554-5
https://doi.org/10.1016/s0040-6090(98)01554-5
Publikováno v:
Thin Solid Films. 340:13-17
We investigated the microstructure of the Ti-films formed on the (001) single crystal silicon wafers through the ionized sputtering process, and compared the results with those obtained by collimated sputtering. We found that the Ti-films created by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b73cebd8beac60bddb6ee81b4b4982ec
https://doi.org/10.1016/s0040-6090(98)01428-x
https://doi.org/10.1016/s0040-6090(98)01428-x
Publikováno v:
Journal of Applied Physics. 83:139-144
For tantalum pentoxide capacitors in 1 Gbit dynamic random access memory, titanium nitride is adopted as the top electrode. After postannealing at temperatures higher than 750 °C, the capacitance of Ta2O5 reduces due to an interfacial reaction betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63d9fd3c3021682448ae087822aa2b20
https://doi.org/10.1063/1.366732
https://doi.org/10.1063/1.366732
Autor:
Moon Yong Lee, Myoung Bum Lee, Jung-min Ha, Young Bum Koh, U. In Chung, Sang-In Lee, Young Wook Park, Byung Lyul Park, Hyeon Deok Lee, Young-sun Kim, Dae Hong Ko
Publikováno v:
Journal of Electronic Materials. 26:L1-L5
We have developed tungsten nitride (W-Nitride) films grown by plasma enhanced chemical vapor deposition (PECVD) for barrier material applications in ultra large scale integration DRAM devices. As-deposited W-Nitride films show an amorphous structure,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7388d1ef2d8d2d0a25c0a0237a9a560
https://doi.org/10.1007/s11664-997-0096-6
https://doi.org/10.1007/s11664-997-0096-6