Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hyeok Jun, Jin"'
Publikováno v:
ACS Nano. 17:9262-9271
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb9d72214bb2673605c53968548ae708
https://doi.org/10.1021/acsnano.3c00566
https://doi.org/10.1021/acsnano.3c00566
Publikováno v:
Nano Research. 14:1305-1310
Two-dimensional (2D) materials have recently provided a new perspective on optoelectronics because of their unique layered structure and excellent physical properties. However, their potential use as optoelectric devices has been limited by the trade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6664038aa11bea2b7a6cf0c24ea3a217
https://doi.org/10.1007/s12274-020-3154-5
https://doi.org/10.1007/s12274-020-3154-5
Publikováno v:
Nano Letters. 20:5741-5748
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34cf49fc96739b0d7576dd89a869ff68
https://doi.org/10.1021/acs.nanolett.0c01460
https://doi.org/10.1021/acs.nanolett.0c01460
Autor:
Dong Sik Oh, Jun Sung Kim, Yang-Kyu Choi, Gwang Hyuk Shin, Khang June Lee, Sung-Yool Choi, Eun-Su An, Hyeok Jun Jin, Cheolmin Park, Geon-Beom Lee
Publikováno v:
ACS Applied Materials & Interfaces. 12:5106-5112
This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS2 channel, and GaS gate insulator. The transistor exhibits a subthreshold
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c41812a48198aab9b04c1575721a7ae
https://doi.org/10.1021/acsami.9b20077
https://doi.org/10.1021/acsami.9b20077
Publikováno v:
Nano letters. 20(8)
Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::09ae765a820eead5ea9df511bd48665a
https://pubmed.ncbi.nlm.nih.gov/32589036
https://pubmed.ncbi.nlm.nih.gov/32589036
Autor:
Gwang Hyuk, Shin, Geon-Beom, Lee, Eun-Su, An, Cheolmin, Park, Hyeok Jun, Jin, Khang June, Lee, Dong Sik, Oh, Jun Sung, Kim, Yang-Kyu, Choi, Sung-Yool, Choi
Publikováno v:
ACS applied materialsinterfaces. 12(4)
This work demonstrates a high-performance and hysteresis-free field-effect transistor based on two-dimensional (2D) semiconductors featuring a van der Waals heterostructure, MoS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::768a54ed8abeb76dad31d187cec631d4
https://pubmed.ncbi.nlm.nih.gov/31898448
https://pubmed.ncbi.nlm.nih.gov/31898448
Publikováno v:
Advanced Materials Technologies. 6:2100494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d09893c61e3c015476b07c8c6fe8252b
https://doi.org/10.1002/admt.202100494
https://doi.org/10.1002/admt.202100494
Autor:
Khang June Lee, Dongsik Oh, Sung-Yool Choi, Hyeok Jun Jin, Woonggi Hong, Cheolmin Park, Gwang Hyuk Shin
Publikováno v:
Journal of Physics D: Applied Physics. 54:145301
Two-dimensional (2D) materials present various extraordinary properties that are advantageous in optoelectronic devices with atomically thin nature. Despite their excellent light–matter interaction, a low optical absorption that is proportional to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::913f84f3aad3ab533fb15e6afe751c4e
https://doi.org/10.1088/1361-6463/abd6ac
https://doi.org/10.1088/1361-6463/abd6ac