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pro vyhledávání: '"Hye-Ran Byun"'
Autor:
Hye-Ran Byun, Young-Geun Ha
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:4249-4253
In this study, we have fabricated hafnium oxide dielectrics for low-voltage organic and amorphous oxide thin-film transistors (TFTs) via a facile low-temperature solution method and investigated the electrical properties of these dielectrics. Hafnium
Autor:
Young-Geun Ha, Hye-Ran Byun
Publikováno v:
Bulletin of the Korean Chemical Society. 39:868-872
Autor:
Hye-Ran Byun, Young-Geun Ha
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:5515-5519
Publikováno v:
ACS applied materialsinterfaces. 9(8)
For large-area, printable, and flexible electronic applications using advanced semiconductors, novel dielectric materials with excellent capacitance, insulating property, thermal stability, and mechanical flexibility need to be developed to achieve h
Publikováno v:
Applied Physics Letters. 114:013301
For advanced electronic device applications including printable, flexible organic electronics and bioelectronics, it is crucial to develop novel dielectric materials with high dielectric strength and low-temperature processability compatible with pla
Publikováno v:
Journal of Korean Medical Science
An autopsy case of disseminated HSV type 2 infection occurring in a neonate at 32 weeks' gestation, delivered by cesarean section after premature rupture of membrane of 7 days duration, is presented. Herpes simplex virus type 2 was isolated from the