Zobrazeno 1 - 3
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pro vyhledávání: '"Hye-Lyun Park"'
Publikováno v:
Japanese Journal of Applied Physics. 41:6153-6164
Ta(Si)N thin films were fabricated by transformer coupled plasma enhanced chemical vapor deposition (TCPECVD) using a pentakisdiethylaminotantalum [PDEAT, Ta(N[C2H5]2)5] metal organic source and SiH4 at 350°C or lower temperatures for various deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd83871fea216047bf6ebcb07e408bea
https://doi.org/10.1143/jjap.41.6153
https://doi.org/10.1143/jjap.41.6153
Publikováno v:
MRS Proceedings. 514
TiN film is used as a diffusion barrier layer in contact and via holes in the metallization process of the microelectronics. In most cases, TiN film has been prepared by sputtering which has limited conformality. With the shrinkage of the dimension o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ed23c82fc2ab55e18dc1b487c87218
https://doi.org/10.1557/proc-514-409
https://doi.org/10.1557/proc-514-409
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