Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hye Su Kang"'
Autor:
Noho Lee, Ho Yeon Jang, Kyubin Shim, Sang-Mun Jung, Jinhyeon Lee, Sang-Hoon You, Hye Su Kang, Jong Kyu Kim, Seoin Back, Yong-Tae Kim
Publikováno v:
ACS Applied Energy Materials. 6:4413-4421
Publikováno v:
ACS Applied Energy Materials. 3:9792-9798
Producing practical chemical feedstocks via electrochemical CO2 reduction is a promising technology for carbon recycling and renewable energy storage. To improve CO2 reduction performance, electroc...
Publikováno v:
Journal of Electrical Engineering and Technology. 11:1763-1768
This paper presents the electrical characteristics of the gallium nitride (GaN) current aperture vertical electron transistor (CAVET) by using two- dimensional (2-D) technology computeraided design (TCAD) simulations. The CAVETs are considered as the
Autor:
In Man Kang, Hye Rim Eun, Gwan Min Yoo, Young J. Kim, Jung-Hee Lee, Hye Su Kang, Young Jun Yoon, Sung Yoon Kim, Jae Hwa Seo, Jungjoon Kim, Seongjae Cho
Publikováno v:
JSTS:Journal of Semiconductor Technology and Science. 14:508-517
We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulktype fin-shaped FET (conventional bulk FinFET). A three-dimensional
Publikováno v:
ACS Applied Energy Materials; 10/26/2020, Vol. 3 Issue 10, p9792-9798, 7p
Autor:
Young In Jang, In Man Kang, Seong Min Lee, Hye Su Kang, Young Jun Yoon, Young J. Kim, Ra Hee Kwon, Seongjae Cho, Hye Rim Eun, Sung Yoon Kim, Gwan Min Yoo, Jae Hwa Seo
Publikováno v:
The 18th IEEE International Symposium on Consumer Electronics (ISCE 2014).
In this work, dependence of device performances on AlGaN/GaN heterostructure recessed-gate fin-shaped-channel field-effect transistor (FinFET), as a power transistor, on the fin dimensions is closely investigated. On-state (I on ) and off-state (I of
Autor:
Sung Yun Woo, Gwan Min Yoo, Seongjae Cho, Hwan Gi Lee, Hye Rim Eun, Sung Yoon Kim, Jae Hwa Seo, Hee Bum Roh, Jung-Hee Lee, In Man Kang, Young J. Kim, Young Jun Yoon, Hye Su Kang
Publikováno v:
2014 Sixth International Conference on Measuring Technology and Mechatronics Automation.
A normally-off recess-gated GaN/AlGaN MOSFET which applicable at green-energy system and automobile SoC technology has been demonstrated. By recess-gated process, the transistor is operated as a normally-off device which has advantages for less power
Autor:
Young Jun Yoon, Hee Bum Roh, Sung Yun Woo, In Man Kang, Hwan Gi Lee, Young J. Kim, Hye Su Kang, Gwan Min Yoo, Sung Yoon Kim, Eou-Sik Cho, Jae Hwa Seo, Hye Rim Eun, Jung-Hee Lee, Seongjae Cho, Jin-Hyuk Bae
Publikováno v:
2014 Sixth International Conference on Measuring Technology and Mechatronics Automation.
We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated in terms of DC and RF characteristics by using the d