Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hye Ryun Sim"'
Autor:
Syed Zahid Hassan, Jieun Kwon, Juhyeok Lee, Hye Ryun Sim, Sanghyeok An, Sangjun Lee, Dae Sung Chung
Publikováno v:
Advanced Science, Vol 11, Iss 23, Pp n/a-n/a (2024)
Abstract Over the past decade, molecular‐switch‐embedded memory devices, particularly field‐effect transistors (FETs), have gained significant interest. Molecular switches are integrated to regulate the resistance or current levels in FETs. Des
Externí odkaz:
https://doaj.org/article/3a46f47251fb41b78deeb61684bf1d42
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
Low cost and low power consumption of transistors are needed for the development of internet of things. Here Chung et al. develop a high performance n-type oxide thin film transistor by introducing a ligand for crosslinking nanoparticles and polymers
Externí odkaz:
https://doaj.org/article/245e5c40227e46d7b0df059f2aa7952c
Autor:
Metikoti Jagadeeswararao, Kyu Min Sim, Sangjun Lee, Mingyun Kang, Sanghyeok An, Geon-Hee Nam, Hye Ryun Sim, Elham Oleiki, Geunsik Lee, Dae Sung Chung
Publikováno v:
Chemistry of Materials. 35:3095-3104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59c6f8689e4aea4b2fcf999a2629cea2
https://doi.org/10.1021/acs.chemmater.2c03271
https://doi.org/10.1021/acs.chemmater.2c03271
Publikováno v:
Advanced Optical Materials. 9:2001836
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c985585a08a1a61029235b97f52adcc1
https://doi.org/10.1002/adom.202001836
https://doi.org/10.1002/adom.202001836