Výsledky vyhledávání

Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study

Autor: Romel Hidayat, Hye-Lee Kim, Khabib Khumaini, Tanzia Chowdhury, Tirta Rona Mayangsari, Byungchul Cho, Sangjoon Park, Won-Jun Lee

Publikováno v: Physical Chemistry Chemical Physics. 25:3890-3899

The mechanism underlying the selective etching of silicon oxide against silicon by HF vapor was elucidated by DFT calculations that showed lower activation energies for silicon oxide than for silicon.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6ccbc781601c6d1ee570bb83cdcd01a
https://doi.org/10.1039/d2cp05456f

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Gas-phase etching mechanism of silicon oxide by a mixture of hydrogen fluoride and ammonium fluoride: A density functional theory study

Autor: Romel Hidayat, Khabib Khumaini, Hye-Lee Kim, Tanzia Chowdhury, Tirta Rona Mayangsari, Seongjae Cho, Byungchul Cho, Sangjoon Park, Jongwan Jung, Won-Jun Lee

Publikováno v: Journal of Vacuum Science & Technology A. 41

We report the selective etching mechanism of silicon oxide using a mixture of hydrogen fluoride (HF) and NH4F gases. A damage-free selective removal of native oxide has been used in semiconductor manufacturing by forming and removing the ammonium flu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0f6cfaf4385701cc1b3f5744f1ec0ca1
https://doi.org/10.1116/6.0002433

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Atomic layer deposition of titanium oxide thin films using a titanium precursor with a linked amido-cyclopentadienyl ligand

Autor: Seongyoon Kim, Romel Hidayat, Hyeonsu Roh, Jaemin Kim, Hye-Lee Kim, Khabib Khumaini, Mira Park, Jang-Hyeon Seok, Jung Woo Park, Won-Jun Lee

Publikováno v: Journal of Materials Chemistry C. 10:6696-6709

We studied the atomic layer deposition (ALD) of titanium oxide (TiO2) thin films using a newly developed heteroleptic titanium precursor with a linked ligand.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ca2568d46e5d89fbb4c3ee2631feb82
https://doi.org/10.1039/d2tc00574c

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Atomic layer deposition of silicon oxide films using bis(dimethylaminomethylsilyl)trimethylsilylamine and ozone: first-principles and experimental study

Autor: Yeongchan Choi, Heeju Son, Khabib Khumaini, Hyunmin Han, Hyeonsu Roh, Hye-Lee Kim, Sang-Ick Lee, Won-Jun Lee

Publikováno v: Journal of Materials Chemistry C. 10:17377-17385

We report high growth rates of the atomic layer deposition of silicon oxide films using a chlorine-free silylamine precursor containing three silicon atoms.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d5ffa96b84ed6cf14c018b5ce5fe7b2
https://doi.org/10.1039/d2tc03555c

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Akademický článek

Selective Inhibitory Effect of Epigallocatechin-3-gallate on Migration of Vascular Smooth Muscle Cells

Autor: Jong-Chul Park, Dong-Wook Han, Suong-Hyu Hyon, Mi Hee Lee, Byeong-Ju Kwon, Hye-Lee Kim

Publikováno v: Molecules, Vol 15, Iss 11, Pp 8488-8500 (2010)

In order to prevent restenosis after angioplasty or stenting, one of the most popular targets is suppression of the abnormal growth and excess migration of vascular smooth muscle cells (VSMCs) with drugs. However, the drugs also adversely affect vasc

Externí odkaz: https://doaj.org/article/e32f1d5135464c849b4b3d829c757924

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Effect of deposition temperature and surface reactions in atomic layer deposition of silicon oxide using Bis(diethylamino)silane and ozone

Autor: Won-Jun Lee, Donggeon Shin, Khabib Khumaini, Hye-Lee Kim, Heeju Son, Hyeonsu Roh

Publikováno v: Applied Surface Science. 571:151231

We investigated the effect of deposition temperature on the properties of the silicon oxide films produced by alternating exposures to bis(diethylamino)silane (BDEAS) and ozone (O3). The surface reactions during the deposition were studied using in s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0e3dbf3a9bf9c95d091ba551385536c6
https://doi.org/10.1016/j.apsusc.2021.151231

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