Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hye Ji Jeon"'
Autor:
Hyun-Ju Kang, Gun-Woong Kang, Oh-Hoon Kwon, Hyeon-Myoung Kwon, Ye-Eun Hwang, Hye-Ji Jeon, Jong-Hyun Joo, Yong-Wan Park
Publikováno v:
Korean Society for Emotion and Sensibility. 24:149-156
Autor:
Sung Hong Joo, Gye Jeong Yeom, Eui Shik Jeong, Hye Jin Jung, Hyun Kyong Ahn, Hye Ji Jeon, Dal Soo Hong, Jung Yeol Han, Anna Choi, Yoon Ha Kim, June Seek Choi, Jeong Sup Yun, Seong Yeon Hong, So-Young Lee
Publikováno v:
Journal of The Korean Society of Maternal and Child Health. 23:209-219
Publikováno v:
Soonchunhyang Medical Science. 25:87-89
Publikováno v:
Journal of the Korean Society for Marine Environment and Energy. 20:219-225
Publikováno v:
Journal of agricultural medicine and community health. 40:221-227
This study assessed whether both physical disability and perceived dependence relate to depression or whether perceived dependence in personal care activities, household activities, community mobility and recreational activities is an intermediate st
Publikováno v:
Journal of Alloys and Compounds. 614:244-248
We evaluated the characteristics of ZnO grown by atmospheric mist chemical vapor deposition at temperatures ranging from 200 °C to 300 °C as a function of the water in the solvent. We also utilized ZnO thin films as an active layer of thin film tra
Autor:
Jin-Seong Park, Young Min Choi, Sang Jin Oh, Sun Sook Lee, Sunho Jeong, Hye-Ji Jeon, Seong Jip Kim
Publikováno v:
ACS Applied Materials & Interfaces. 6:18429-18434
In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn-Sn-O (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol-gel reactions and the evolution of chemical
Publikováno v:
Ceramics International. 40:8769-8774
Amorphous AlZnSnO (AZTO) channel layer thin film transistors (TFTs) with various Al doping ratios were fabricated using a solution process. Electrical, structural, and optical properties were systematically investigated as a function of Al doping. At
Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition
Publikováno v:
Applied Surface Science. 301:358-362
Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ∼100 times greater than that of undoped ZnO. The ad
Publikováno v:
Journal of Electroceramics. 32:319-323
Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol.