Zobrazeno 1 - 10
of 38 529
pro vyhledávání: '"Hydrogenated Amorphous Silicon"'
We present new atomistic models of amorphous silicon (a-Si) and hydrogenated amorphous silicon (a-Si:H) surfaces. The a-Si model included 4096 atoms and was obtained using local orbital density functional theory. By analyzing a slab model (periodic i
Externí odkaz:
http://arxiv.org/abs/2412.14270
Autor:
Menichelli, M., Aziz, S., Bashiri, A., Bizzarri, M., Buti, C., Calcagnile, L., Calvo, D., Caprai, M., Caputo, D., Caricato, A. P., Catalano, R., Cazzanelli, M., Cirio, R., Cirrone, G. A. P., Cittadini, F., Croci, T., Cuttone, G., de Cesare, G., De Remigis, P., Dunand, S., Fabi, M., Frontini, L., Grimani, C., Guarrera, M., Hasnaoui, H., Ionica, M., Kanxheri, K., Large, M., Lenta, F., Liberali, V., Lovecchio, N., Martino, M., Maruccio, G., Maruccio, L., Mazza, G., Monteduro, A. G., Morozzi, A., Nascetti, A., Pallotta, S., Papi, A., Passeri, D., Pedio, M., Petasecca, M., Petringa, G., Peverini, F., Placidi, P., Polo, M., Quaranta, A., Quarta, G., Rizzato, S., Sabbatini, F., Servoli, L., Stabile, A., Talamonti, C., Thomet, J. E., Mora, M. S. Vasquez, Villani, M., Wheadon, R. J., Wyrsch, N., Zema, N., Tosti, L.
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two diff
Externí odkaz:
http://arxiv.org/abs/2412.13124
At sub-Kelvin temperatures, two-level systems (TLS) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We
Externí odkaz:
http://arxiv.org/abs/2412.09693
Hydrogenated amorphous silicon microspheres feature a pronounced phononic peak around 2000 cm-1 when they are thermally excited by means of a blue laser. This phononic signature corresponds to vibrational modes of silicon-hydrogen bonds and its emitt
Externí odkaz:
http://arxiv.org/abs/2411.14229