Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Hydrogen-terminated silicon surface"'
Autor:
Toshihito Ohtake, Ken-ichiro Iijima
Publikováno v:
Journal of Surface Engineered Materials and Advanced Technology. :61-68
It has been attempted to immobilize organic mono layer on semiconductor surface as functional materials. Silicon surface was especially noticed to develop highly efficient and functional devices, and the silicon devices were expected for the immobili
Autor:
Jeremiah Croshaw, Taleana Huff, Thomas Dienel, Lucian Livadaru, Robert A. Wolkow, Roshan Achal, Mohammad Rashidi
With nanoelectronics reaching the limit of atom-sized devices, it has become critical to examine how irregularities in the local environment can affect device functionality. Here, we characterize the influence of charged atomic species on the electro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72767fd94b8b552f2dabf4e620629907
https://doi.org/10.1021/acsnano.9b04653
https://doi.org/10.1021/acsnano.9b04653
Publikováno v:
The Journal of Physical Chemistry C. 120:27980-27988
Gas-phase one-dimensional organometallic sandwich nanowires (SWNs) made by transition metal atoms and π-conjugated hydrocarbon rings have been subjected to intensive experimental and theoretical studies. In this work, we theoretically predicted the
Autor:
Mohammad Koleini, Isil Ozfidan, Marco Taucer, Jason L. Pitters, Hatem Labidi, Robert A. Wolkow, Joseph Maciejko, Mohammad Rashidi, Erika Lloyd
Publikováno v:
Physical review letters. 117(27)
Negative differential resistance remains an attractive but elusive functionality, so far only finding niche applications. Atom scale entities have shown promising properties, but the viability of device fabrication requires a fuller understanding of
Autor:
Takashi Ichii, Hiroyuki Sugimura, Kuniaki Murase, Om P. Khatri, Masayuki Kanehara, Toshiharu Teranishi
Publikováno v:
Journal of Colloid and Interface Science. 382:22-27
Synthesis of ω-alkenyl-terminated silver nanoparticles (AgNPs) and then their immobilization on a hydrogen-terminated silicon surface in two-dimensional arrangement through covalent interaction are demonstrated. The thermal-induced hydrosilylation a
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27(2):858-862
Visible-light irradiation has been employed to promote a chemical reaction of 1-hexadecene with hydrogen-terminated silicon, yielding alkyl chains directly immobilized on bulk silicon surface. The resulting monolayer, that is, one type of self-assemb
Publikováno v:
Applied Surface Science. 253:1534-1539
Using wet chemical reaction between N-vinylcarbazole and hydrogen-terminated silicon surface, we present a new and simple route to directly bond π-conjugated organic molecule on silicon surface. The Si can be in the form of single crystal Si includi
Autor:
Kunio Miura, Takeshi Takatsuka, Momoji Kubo, Mutsuya Tomonari, Masazumi Godo, Akira Miyamoto, Seiichi Takami
Publikováno v:
Journal of the IEST. 46:98-102
The adsorption process of chemical contaminants on silicon wafers was investigated by using molecular mechanics, molecular dynamics, Monte Carlo method, and computer graphics. The adsorption energy of organic gaseous contaminants, such as DBP, DOP, a
Autor:
Xiaoyang Zhu, Yongseok Jun
Publikováno v:
Journal of Adhesion Science and Technology. 17:593-601
Reducing surface energy is key to the success of many microelectromechanical systems (MEMS). In this report we present a strategy for the efficient assembly of alkoxyl monolayers onto a silicon surface to control surface energy. This is achieved by a
Autor:
Suvi Haukka, E. Young, M.M. Heyns, W Besling, Thierry Conard, Chao Zhao, R. J. Carter, Matty Caymax, Wilfried Vandervorst, Marko Tuominen, S. De Gendt, J.W. Maes
Publikováno v:
Journal of Non-Crystalline Solids. 303:123-133
Al 2 O 3 and ZrO 2 mixtures for gate dielectrics have been investigated as replacements for silicon dioxide aiming to reduce the gate leakage current and reliability in future CMOS devices. Al 2 O 3 and ZrO 2 films were deposited by atomic layer chem