Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Hyang‐Shik Kong"'
Publikováno v:
IEEE Journal of Quantum Electronics. 48:952-959
Photo-generation properties in an amorphous SiGe:H thin film transistor (TFT) were characterized by analyzing the electrical performances under illumination. The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-
Autor:
Sung-Hoon Yang, Woong-Kwon Kim, Sang Youn Han, Dae-Cheol Kim, Ki-Hun Jeong, Kyung Sook Jeon, Mi Seon Seo, Seung Mi Seo, Byeong-Hoon Cho, Hyung Guel Kim, Hyang-Shik Kong, Suk-Won Jung, Jun-ho Song
Publikováno v:
SID Symposium Digest of Technical Papers. 43:330-333
The a-SiGe:H TFT photosensor for embedded touch screen panel (TSP) was characterized compared with a-Si:H TFT. The photo sensitivity of a-SiGe:H sensor at 850 nm IR light was ∼15 times higher than that of a-Si:H, indicating that a-SiGe:H is a stron
Autor:
Jang Yeon Kwon, Hyang-Shik Kong, Bo Sung Kim, Seung-Hwan Cho, Min-Koo Han, Yong-Uk Lee, Jo Kangmoon, Jeong-Soo Lee
Publikováno v:
Journal of Display Technology. 8:35-40
In this paper, we proposed the self-assembled monolayer (SAM) as a protection layer against plasma and chemically induced damages to the back interface of an oxide semiconductor during the deposition of the passivation layer. When a thin-film transis
Publikováno v:
ACS applied materialsinterfaces. 7(28)
We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to po
Autor:
Ki Beom Lee, Sukwon Lee, Gug-Rae Jo, Young Tae Cho, Hyang-Shik Kong, Seung-Jun Lee, Sunggun Lee, Jae-hyuk Chang, Ki-Yong Lee, Kwon Sin, Jung-Woo Seo
Publikováno v:
The Review of scientific instruments. 86(5)
For high-quality flexible devices from printing processes based on Roll-to-Roll (R2R) systems, overlay alignment during the patterning of each functional layer poses a major challenge. The reason is because flexible substrates have a relatively low s
Autor:
Hyang‐Shik Kong, Choochon Lee
Publikováno v:
Journal of Applied Physics. 78:6122-6131
We propose a simulation model to explain two‐dimensional field‐effect operation of undoped poly‐Si thin‐film transistors (TFTs) under small drain voltages. Our model includes both thermionic‐emission and drift‐diffusion conduction process
Publikováno v:
Journal of Applied Physics. 78:3467-3471
An experimental method, the thermally stimulated bias stress (TSBS) method, is presented to evaluate the stability of amorphous silicon thin film transistors (TFTs). TSBS experiment monitors the drain currents under constant gate bias while increasin
Autor:
Chang-Oh Jeong, Yasuaki Ishikawa, Il-Joon Kang, Dong-Hee Lee, Katsushi Kishimoto, Hyang-Shik Kong
Publikováno v:
Japanese Journal of Applied Physics. 54:104101
The applicability of thallium–zinc–tin oxide (TlZnSnO) as a channel material for a thin-film transistor (TFT) was investigated by first-principles simulation and cosputtering experiment with XZnSnO (X = Al, Ga or In). The electron effective mass
Publikováno v:
Japanese Journal of Applied Physics. 53:121101
To investigate the origin of threshold voltage (Vth) shift of amorphous In?Ga?Zn?O (a-IGZO) thin-film transistors (TFTs), a combination of bias-temperature stress (BTS) and multi-frequency capacitance?voltage (C?V) measurements were used to evaluate
Publikováno v:
Journal of Physics D: Applied Physics. 47:285302
We report on the formation of ring-shaped stain patterns in a polymer-stabilized patterned vertical alignment mode liquid crystal display (LCD) during the cell filling process. Through the interpretation of the formation mechanism, an effective way t