Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Hyang‐Shik Kong"'
Publikováno v:
IEEE Journal of Quantum Electronics. 48:952-959
Photo-generation properties in an amorphous SiGe:H thin film transistor (TFT) were characterized by analyzing the electrical performances under illumination. The a-SiGe:H TFT showed a higher photo sensitivity at the wavelength of IR regime, and as a-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf9b9c02de9afedab975ea66b8e931a6
https://doi.org/10.1109/jqe.2012.2196411
https://doi.org/10.1109/jqe.2012.2196411
Autor:
Sung-Hoon Yang, Woong-Kwon Kim, Sang Youn Han, Dae-Cheol Kim, Ki-Hun Jeong, Kyung Sook Jeon, Mi Seon Seo, Seung Mi Seo, Byeong-Hoon Cho, Hyung Guel Kim, Hyang-Shik Kong, Suk-Won Jung, Jun-ho Song
Publikováno v:
SID Symposium Digest of Technical Papers. 43:330-333
The a-SiGe:H TFT photosensor for embedded touch screen panel (TSP) was characterized compared with a-Si:H TFT. The photo sensitivity of a-SiGe:H sensor at 850 nm IR light was ∼15 times higher than that of a-Si:H, indicating that a-SiGe:H is a stron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fb7f3de3425fdd412e25cec41705bc2
https://doi.org/10.1002/j.2168-0159.2012.tb05782.x
https://doi.org/10.1002/j.2168-0159.2012.tb05782.x
Autor:
Jang Yeon Kwon, Hyang-Shik Kong, Bo Sung Kim, Seung-Hwan Cho, Min-Koo Han, Yong-Uk Lee, Jo Kangmoon, Jeong-Soo Lee
Publikováno v:
Journal of Display Technology. 8:35-40
In this paper, we proposed the self-assembled monolayer (SAM) as a protection layer against plasma and chemically induced damages to the back interface of an oxide semiconductor during the deposition of the passivation layer. When a thin-film transis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075112054586531e2e1352870e0b8f3f
https://doi.org/10.1109/jdt.2011.2169936
https://doi.org/10.1109/jdt.2011.2169936
Publikováno v:
ACS applied materialsinterfaces. 7(28)
We report on the unusual behavior of threshold voltage turnaround in a hydrogenated amorphous silicon (a-Si:H) thin film transistor (TFT) when biased under extremely high intensity illumination. The threshold voltage shift changes from negative to po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c047d8d2519cd8f46bd4161371782fef
https://pubmed.ncbi.nlm.nih.gov/26132513
https://pubmed.ncbi.nlm.nih.gov/26132513
Autor:
Ki Beom Lee, Sukwon Lee, Gug-Rae Jo, Young Tae Cho, Hyang-Shik Kong, Seung-Jun Lee, Sunggun Lee, Jae-hyuk Chang, Ki-Yong Lee, Kwon Sin, Jung-Woo Seo
Publikováno v:
The Review of scientific instruments. 86(5)
For high-quality flexible devices from printing processes based on Roll-to-Roll (R2R) systems, overlay alignment during the patterning of each functional layer poses a major challenge. The reason is because flexible substrates have a relatively low s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62f00176753d13ee9450813cda908786
https://pubmed.ncbi.nlm.nih.gov/26026559
https://pubmed.ncbi.nlm.nih.gov/26026559
Autor:
Hyang‐Shik Kong, Choochon Lee
Publikováno v:
Journal of Applied Physics. 78:6122-6131
We propose a simulation model to explain two‐dimensional field‐effect operation of undoped poly‐Si thin‐film transistors (TFTs) under small drain voltages. Our model includes both thermionic‐emission and drift‐diffusion conduction process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed4df5d418564d4980439833a1c5cd5
https://doi.org/10.1063/1.360554
https://doi.org/10.1063/1.360554
Publikováno v:
Journal of Applied Physics. 78:3467-3471
An experimental method, the thermally stimulated bias stress (TSBS) method, is presented to evaluate the stability of amorphous silicon thin film transistors (TFTs). TSBS experiment monitors the drain currents under constant gate bias while increasin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a9fab28281ab55e375e8091b8fed36
https://doi.org/10.1063/1.360750
https://doi.org/10.1063/1.360750
Autor:
Chang-Oh Jeong, Yasuaki Ishikawa, Il-Joon Kang, Dong-Hee Lee, Katsushi Kishimoto, Hyang-Shik Kong
Publikováno v:
Japanese Journal of Applied Physics. 54:104101
The applicability of thallium–zinc–tin oxide (TlZnSnO) as a channel material for a thin-film transistor (TFT) was investigated by first-principles simulation and cosputtering experiment with XZnSnO (X = Al, Ga or In). The electron effective mass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a847cf0c258c90a9ccc5ed2d89454993
https://doi.org/10.7567/jjap.54.104101
https://doi.org/10.7567/jjap.54.104101
Publikováno v:
Japanese Journal of Applied Physics. 53:121101
To investigate the origin of threshold voltage (Vth) shift of amorphous In?Ga?Zn?O (a-IGZO) thin-film transistors (TFTs), a combination of bias-temperature stress (BTS) and multi-frequency capacitance?voltage (C?V) measurements were used to evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8b7de40f695a0d982608eb14f2ada7
https://doi.org/10.7567/jjap.53.121101
https://doi.org/10.7567/jjap.53.121101
Publikováno v:
Journal of Physics D: Applied Physics. 47:285302
We report on the formation of ring-shaped stain patterns in a polymer-stabilized patterned vertical alignment mode liquid crystal display (LCD) during the cell filling process. Through the interpretation of the formation mechanism, an effective way t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3191f952295a39426833fa97f4ff2316
https://doi.org/10.1088/0022-3727/47/28/285302
https://doi.org/10.1088/0022-3727/47/28/285302