Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Hwiseob Lee"'
Publikováno v:
IEEE Access, Vol 7, Pp 66275-66280 (2019)
This paper presents a broadband gallium-arsenide pseudomorphic high-electron-mobilitytransistor (GaAs pHEMT) power amplifier integrated circuit (PAIC) based on a dual-frequency selective impedance matching technique for warfare applications. For a br
Externí odkaz:
https://doaj.org/article/7f598030d33d4981a5df45bd0b8e6087
Autor:
Wooseok Lee, Hyunuk Kang, Hwiseob Lee, Jongseok Bae, Sungjae Oh, Hansik Oh, Hyungmo Koo, Jangsup Yoon, Keum Cheol Hwang, Kang-Yoon Lee, Youngoo Yang
Publikováno v:
IEEE Access, Vol 7, Pp 176658-176667 (2019)
This paper presents a two-stage stacked power amplifier integrated circuit (PAIC) for broadband and high efficiency using a 2-μm InGap/GaAs HBT process with a second-harmonic control circuit and a bias-switching circuit for an average power tracking
Externí odkaz:
https://doaj.org/article/b4501f96e08a44a29196d1ac8a48de93
Autor:
Jangsup Yoon, Hyungmo Koo, Keum Cheol Hwang, Jongseok Bae, Hyunuk Kang, Wooseok Lee, Wonseob Lim, Kang-Yoon Lee, Youngoo Yang, Hwiseob Lee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 67:5090-5100
This article presents a broadband two-stage cascode power amplifier integrated circuit (PAIC) using a 2- $\mu \text{m}$ InGaP/GaAs heterojunction bipolar transistor process. Since higher supply voltage of cascode power amplifier (PA) results in lower
Autor:
Hyunuk Kang, Kang-Yoon Lee, Hansik Oh, Wooseok Lee, Youngoo Yang, Hyungmo Koo, Keum Cheol Hwang, Wonseob Lim, Hwiseob Lee, Cheon-Seok Park
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 66:583-593
This paper presents a broadband Doherty power amplifier (DPA) design with an octave bandwidth based on a new load network consisting of a quasi-lumped impedance transformer for the carrier amplifier, a multiple resonance circuit for the peaking ampli
Autor:
Youngoo Yang, Sungjae Oh, Keum Cheol Hwang, Jongseok Bae, Hyungmo Koo, Hansik Oh, Jangsup Yoon, Hyunuk Kang, Kang-Yoon Lee, Wooseok Lee, Hwiseob Lee
Publikováno v:
IEEE Access. 7:176658-176667
This paper presents a two-stage stacked power amplifier integrated circuit (PAIC) for broadband and high efficiency using a 2-μm InGap/GaAs HBT process with a second-harmonic control circuit and a bias-switching circuit for an average power tracking
Autor:
Youngoo Yang, Keum Cheol Hwang, Wooseok Lee, Hyunuk Kang, Hyungmo Koo, Hwiseob Lee, Kang-Yoon Lee
Publikováno v:
IET Microwaves, Antennas & Propagation. 12:2115-2121
A gallium-nitride high electron mobility transistor (GaN-HEMT) three-way asymmetric Doherty power amplifier using an unequal three-way Gysel power divider (GPD) is presented in this study. Considering the output power capacity of transistors, the pea
Autor:
Youngoo Yang, Sungjae Oh, Cheon-Seok Park, Wonseob Lim, Keum Cheol Hwang, Hansik Oh, Hwiseob Lee, Taewan Kim, Kang-Yoon Lee
Publikováno v:
IEEE Microwave Magazine. 19:78-83
This article presents the design procedure and measurement results for a 4:1 wide-band transmission-line balun based on a combination of two different ferrite cores. The balun ranked first at the Student Design Competition for "Wide-Band Baluns" that
Autor:
Kang-Yoon Lee, Keum Cheol Hwang, Jaekyung Han, Hwiseob Lee, Wooseok Lee, Youngoo Yang, Hyunuk Kang, Wonseob Lim
Publikováno v:
IET Microwaves, Antennas & Propagation. 12:179-184
This study presents an X-band two-stage Doherty power amplifier (DPA) using pre-matched gallium-nitride high electron mobility transistors (GaN-HEMTs). The pre-matched GaN-HEMT includes partial matching circuits in the package using bond-wires and ca
Autor:
Wooseok Lee, Kang-Yoon Lee, Youngoo Yang, Hwiseob Lee, Jongseok Bae, Hyunuk Kang, Keum Cheol Hwang, Cheon-Seok Park, Wonseob Lim
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:5203-5211
This paper presents a fully integrated gallium-nitride high-electron-mobility transistor (GaN-HEMT) Doherty power amplifier (DPA) based on a compact load network for small-cell applications. The gate width of the transistor is optimized to have a loa
Autor:
Min Seok Kim, Wooseok Lee, Hansik Oh, Keum Cheol Hwang, Kang-Yoon Lee, Hyunuk Kang, Wonseob Lim, Cheon-Seok Park, Youngoo Yang, Hyungmo Koo, Hwiseob Lee
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 65:4190-4197
This paper presents a Doherty power amplifier (DPA) based on asymmetric cells using an even input power drive and an appropriate peak fundamental current ratio (FCR) between the peaking amplifier and the carrier amplifier. Using an appropriate output