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pro vyhledávání: '"Hwi San Kim"'
Autor:
Ju-Young Jung, Jai-Hyun Kim, Jung-Hoon Park, Hwi San Kim, Hongsik Jeong, Sung Yung Lee, Heung Jin Joo, Do Yeon Choi, Kinam Kim, Seung Kuk Kang, E.S. Lee, Young-Min Kang
Publikováno v:
Integrated Ferroelectrics. 89:106-115
We developed a 1.6 V FRAM embedded device by successfully implementing a 100 nm MOCVD-PZT capacitor with a SrRuO3 electrode and a novel additional top electrode (ATE). ATE was used for preventing hydrogen-reduction damage or metal substance damage, a
A NOVEL ATE (ADDITIONAL TOP-ELECTRODE) SCHEME FOR A 1.6 V FRAM EMBEDDED DEVICE AT 180 NM TECHNOLOGY.
Autor:
Heung Jin Joo, Seung Kuk Kang, Jung Hoon Park, Hwi San Kim, Jai-Hyun Kim, Ju Young Jung, Do Yeon Choi, Eun Sun Lee, Young Min Kang, Sung Yung Lee, Hong Sik Jeong, Kinam Kim
Publikováno v:
Integrated Ferroelectrics; 2007, Vol. 89 Issue 1, p106-115, 10p, 3 Diagrams, 1 Chart, 10 Graphs