Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Hwe-Fen Hong"'
Autor:
Shan-Ming Lan, Wu-Yih Uen, Chih-Hung Wu, Sen-Mao Liao, Li-Wei Weng, Tsun-Neng Yang, Chin-Chang Shen, Hwe-Fen Hong, Wei-Yang Ma
Publikováno v:
Applied Surface Science. 277:1-6
p-type ZnO films were prepared by atmospheric metal-organic chemical vapor deposition technique using arsine (AsH 3 ) as the doping source. The electrical and optical properties of arsenic-doped ZnO (ZnO:As) films fabricated at 450–600 °C with var
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4444674acebf0fffee232dc3acedc980
https://doi.org/10.1016/j.apsusc.2013.03.005
https://doi.org/10.1016/j.apsusc.2013.03.005
Autor:
Yen-Chin Huang, Meng-Chu Chen, Chih-Hung Wu, Zhen-Yu Li, Wu-Yih Uen, Hwe-Fen Hong, Tsun-Neng Yang, Shan-Ming Lan, Gou-Chung Chi
Publikováno v:
Journal of Crystal Growth. 295:103-107
In this work, a buffer structure of a-GaAs/a-Si double amorphous layers was used for the epitaxial growth of GaAs on Si substrate by metal-organic vapor phase epitaxy. The atomic force microscopy (AFM) images exhibited that the root-mean-square (RMS)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90df4284aa0308563f57dd9ee6550e3
https://doi.org/10.1016/j.jcrysgro.2006.07.026
https://doi.org/10.1016/j.jcrysgro.2006.07.026