Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hwasung Rhee"'
Autor:
Sungman Rhee, Hyunjin Kim, Sangku Park, Taiki Uemura, Yuchul Hwang, Seungjin Choo, Jinju Kim, Hwasung Rhee, Shinyoung Chung
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1ae2da3bcc4160d771a959855311dd
https://doi.org/10.1109/irps48203.2023.10117962
https://doi.org/10.1109/irps48203.2023.10117962
Autor:
Kihyun Choi, Hyun Chul Sagong, Wonchang Kang, Hyunjin Kim, Jiang Hai, Miji Lee, Bomi Kim, Mi-ji Lee, Soonyoung Lee, Hyewon Shim, Junekyun Park, Youngwoo Cho, Hwasung Rhee, Sangwoo Pae
Publikováno v:
IEEE Transactions on Electron Devices. 66:5399-5403
In this article, we report the reliability characterization of 7-nm technology, in which the highly scaled sixth generation of FinFETs and 256-Mb static random access memory (SRAM) cells were newly developed by featuring extreme ultraviolet (EUV). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d3ac446006f81966c9b6356d809ebb07
https://doi.org/10.1109/ted.2019.2950008
https://doi.org/10.1109/ted.2019.2950008
Autor:
Miji Lee, Do Hwan Chung, Hyo-Young Kim, Mi-Ji Lee, Moonsoo Lee, Jinseok Kim, Hanbyul Kang, Hwasung Rhee, Sangwoo Pae
Publikováno v:
2020 IEEE International Interconnect Technology Conference (IITC).
A novel in-situ electro-thermal TEM method is presented to observe EM Cu interconnects on Co capping and Co liner/TaN barriers. In order to suppress the surface diffusion induced by metallic contamination during sample preparation, a new sampling met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f46c53e1ad990587ad138974ebc2583b
https://doi.org/10.1109/iitc47697.2020.9515592
https://doi.org/10.1109/iitc47697.2020.9515592
Conference
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