Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Hwanyeol Park"'
Publikováno v:
Electrochemistry Communications, Vol 155, Iss , Pp 107581- (2023)
Most metal fluorides-based Li ion battery cathodes suffer from large voltage polarization, volume change, slow rate, and capacity loss in battery cycling due to Li conversion reactions. Here we report a new type of intercalation Li metal fluorides ob
Externí odkaz:
https://doaj.org/article/c852d7f9668742cdaa7e84259935e950
Publikováno v:
ACS Applied Nano Materials. 5:16365-16375
Publikováno v:
Inorganic Chemistry Frontiers. 7:4347-4356
The nature and the mechanism of the film interaction with the substrate at the film/substrate interface are still far from being fully understood. Here, we demonstrate an ab initio investigation of the thermodynamic driving force across the initial p
Autor:
Ho Jun Kim, Hwanyeol Park
Publikováno v:
Coatings, Vol 11, Iss 1041, p 1041 (2021)
Coatings
Volume 11
Issue 9
Coatings
Volume 11
Issue 9
The rapid and uniform growth of hydrogenated silicon (Si:H) films is essential for the manufacturing of future semiconductor devices
therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture
therefore, Si:H films are mainly deposited using SiH4-based plasmas. An increase in the pressure of the mixture
Autor:
Daekwang Woo, Se Jun Park, Euijoon Yoon, Gun-Do Lee, Ho Jun Kim, Sungwoo Lee, Hwanyeol Park, Kangsoo Kim
Publikováno v:
RSC Advances. 8:21164-21173
For the development of the future ultrahigh-scale integrated memory devices, a uniform tungsten (W) gate deposition process with good conformal film is essential for improving the conductivity of the W gate, resulting in the enhancement of device per
Dissociation reaction of B2H6 on TiN surfaces during atomic layer deposition: first-principles study
Publikováno v:
RSC Advances. 7:55750-55755
In the fabrication process of memory devices, a void-free tungsten (W) gate process with good conformability is very important for improving the conductivity of the W gate, leading to enhancement of device performance. As the downscaling continues to
Autor:
Gun-Do Lee, Jong-Myeong Lee, Daekwang Woo, Sungwoo Lee, Euijoon Yoon, Ho Jun Kim, Hwanyeol Park, Se Jun Park
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
Scientific Reports
Scientific Reports
Amorphous carbon (a-C) films have received significant attention due to their reliable structures and superior mechanical, chemical and electronic properties, making them a strong candidate as a hard mask material. We investigated the energetics, str
Autor:
Yung-Chang Lin, Alex W. Robertson, Euijoon Yoon, Kazu Suenaga, Christopher P. Ewels, Hwanyeol Park, Jeong-Wook Oh, Sungwoo Lee, Gun-Do Lee, Young-Chang Joo, Jamie H. Warner
Publikováno v:
Science Advances
Science Advances, American Association for the Advancement of Science (AAAS), 2020, 6 (24), pp.eaba4942. ⟨10.1126/sciadv.aba4942⟩
Science Advances, American Association for the Advancement of Science (AAAS), 2020, 6 (24), pp.eaba4942. ⟨10.1126/sciadv.aba4942⟩
Mediator atoms catalyse bond formation and breaking in graphene and its defects.
The structural transformations of graphene defects have been extensively researched through aberration-corrected transmission electron microscopy (AC-TEM) and theor
The structural transformations of graphene defects have been extensively researched through aberration-corrected transmission electron microscopy (AC-TEM) and theor
Autor:
Hwanyeol, Park, Daekwang, Woo, Jong Myeong, Lee, Se Jun, Park, Sungwoo, Lee, Ho Jun, Kim, Euijoon, Yoon, Gun-Do, Lee
Publikováno v:
RSC advances. 10(12)
Amorphous carbon (a-C) films have attracted significant attention due to their reliable structures and superior mechanical, chemical and electronic properties, making them a strong candidate as an etch hard mask material for the fabrication of future
Publikováno v:
Applied Surface Science. 550:149391
The nature of the electronic interaction of precursor molecules with functionalized surfaces are still uncertain. Here, DFT calculations were performed to study the dissociative reactions of TiCl4 on non-hydroxylated and hydroxylated α-Al2O3 (0 0 0