Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hwansoo, Suh"'
Autor:
Wonhee Ko, Hyo Won Kim, Yeonchoo Cho, JiYeon Ku, Hyeokshin Kwon, Youngtek Oh, Jin-Wook Jung, Insu Jeon, Hwansoo Suh, Young Kuk, Sung Woo Hwang
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085325-085325-6 (2020)
Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the l
Externí odkaz:
https://doaj.org/article/a5a56a4a02dd406f9b987a9ef12a28da
Autor:
Hwansoo Suh, Joohyun Lee, Young Jae Song, Seongjun Park, Hyeokshin Kwon, Youngtek Oh, Insu Jeon, Dong-Jin Yun
Publikováno v:
Physica B: Condensed Matter. 561:132-135
The one-dimensional form of silicon (Si) has been attracting significant scientific and industrial interest again in the field of Li-ion batteries as well as electronic devices, offering higher reversible capacity than carbon materials in an anode. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ed1ea9773ec0e47c85f78f4b3d272cc
https://doi.org/10.1016/j.physb.2019.02.059
https://doi.org/10.1016/j.physb.2019.02.059
Autor:
Hwansoo Suh, Sangwoo Park, Hyunmin Kang, Taehwan Jeong, Seong Jun Jung, Young Jae Song, Jae-Hyun Lee, Dongmok Whang
Publikováno v:
Journal of the Korean Physical Society. 74:241-244
The interface states at the graphene-dielectric substrate are scientifically and industrially important to control the electronic properties for the graphene-based applications. In this report, we present the atomic and electronic structures of graph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec9a43c259e0c38648ee0ec60ece4992
https://doi.org/10.3938/jkps.74.241
https://doi.org/10.3938/jkps.74.241
Autor:
Youngtek Oh, Wonhee Ko, Jung Jinwook, Hwansoo Suh, Hyo Won Kim, Hyeokshin Kwon, Insu Jeon, Young Kuk, Yeonchoo Cho, Sungwoo Hwang, JiYeon Ku
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085325-085325-6 (2020)
Intrinsic defects in graphitic materials, like vacancies and edges, have been expected to possess magnetic states from the many-body interaction of localized electrons. However, charge screening from graphite bulk carriers significantly reduces the l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::266aa25a3cfec50826315ade2e8a7c93
https://doi.org/10.1063/5.0010466
https://doi.org/10.1063/5.0010466
Autor:
Young Hee Lee, Insu Jeon, Sung Kyu Jang, Young Jae Song, Seong Jun Jung, Hwansoo Suh, Qinke Wu, Joohyun Lee, Sungjoo Lee, Yong Ho Kim
Publikováno v:
Nanoscale. 7:10357-10361
We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b36ad43433f2cd0cdac464e948632f0d
https://doi.org/10.1039/c5nr02716k
https://doi.org/10.1039/c5nr02716k
Autor:
Hyeokshin, Kwon, Kiyoung, Lee, Jinseong, Heo, Youngtek, Oh, Hyangsook, Lee, Samudrala, Appalakondaiah, Wonhee, Ko, Hyo Won, Kim, Jin-Wook, Jung, Hwansoo, Suh, Hongki, Min, Insu, Jeon, Euyheon, Hwang, Sungwoo, Hwang
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 29(41)
Despite recent efforts for the development of transition-metal-dichalcogenide-based high-performance thin-film transistors, device performance has not improved much, mainly because of the high contact resistance at the interface between the 2D semico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::10b56bc4346feb353288cf653e603e68
https://pubmed.ncbi.nlm.nih.gov/28922484
https://pubmed.ncbi.nlm.nih.gov/28922484
Autor:
Wonhee Ko, Hwansoo Suh, Hyo Won Kim, Hyeokshin Kwon, Sungwoo Hwang, Insu Jeon, Se-Jong Kahng, Seunghwa Ryu, Sung-Hoon Lee, JiYeon Ku
Publikováno v:
Carbon. 78:190-195
The interaction between a graphene edge and the underlying metal is investigated through the use of scanning tunneling microscopy (STM) and density functional theory (DFT) calculations and found to influence the geometrical structure of the graphene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e25439666cbafcb69348aebfd5338a
https://doi.org/10.1016/j.carbon.2014.06.071
https://doi.org/10.1016/j.carbon.2014.06.071
Autor:
Marsha A. Loth, Hyung Bin Son, Kyuhyun Im, Seung Nam Cha, Jaehyun Hur, Jong Min Kim, Jaeyoung Jang, John E. Anthony, Jineun Kim, Jong-Jin Park, Sooji Nam, Hwansoo Suh, Chan-Eon Park, Kinam Kim
The preparation of uniform large-area highly crystalline organic semiconductor thin films that show outstanding carrier mobilities remains a challenge in the field of organic electronics, including organic field-effect transistors. Quantitative contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46c6fd0ef0223bf4c35604bff813326e
https://doi.org/10.1002/adfm.201102284
https://doi.org/10.1002/adfm.201102284
Autor:
Sung Soo Park, Jong Min Kim, Min Ho Yang, Un Jeong Kim, Chan-Wook Baik, Hwansoo Suh, Sunil Kim, Jun-hee Choi, Jae Soong Lee, Kinam Kim, Andrei Zoulkarneev, Miyoung Kim, Hyung Bin Son
Publikováno v:
Nature Photonics. 5:763-769
Researchers use a pre-orienting layer to achieve nearly single-crystalline GaN pyramidal arrays on amorphous glass substrates. The polycrystalline morphology can be controlled by placing a hole-patterned SiO2 layer on the low-temperature GaN nucleati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94733d0b5861afe098f1606856ae5bde
https://doi.org/10.1038/nphoton.2011.253
https://doi.org/10.1038/nphoton.2011.253
Publikováno v:
Surface Science. 602:3352-3357
We performed scanning tunneling microscopy/spectroscopy measurements and spatial mapping of d I /d V on a few atomic layers of bismuth (Bi) film on a Si(1 1 1)−(7 × 7) substrate. At a Bi coverage of four monolayers (ML), local thickness variation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c009039fae4d45023e6d5fe740fc492
https://doi.org/10.1016/j.susc.2008.09.004
https://doi.org/10.1016/j.susc.2008.09.004