Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hwang–Kuen Lin"'
Publikováno v:
Applied optics. 40(16)
The increasingly smaller depth of focus of advanced lithographic tools requires that the position of best focus be determined to ensure accuracy and efficiency. We present what we believe is a novel bar in bar that is drawn on a conventional chrome b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2c1d4367f454865076166c81ace7f5e
https://pubmed.ncbi.nlm.nih.gov/18357281
https://pubmed.ncbi.nlm.nih.gov/18357281
Publikováno v:
SPIE Proceedings.
The reduced depth of focus (DOF) caused by higher numerical aperture (NA) is making the accuracy of best focus measurement increasingly important. A new overlay pattern is developed herein to precisely measure the best focus of lithographic tools. Sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294a7fc6885dec1fba7aee83a2c1b665
https://doi.org/10.1117/12.410087
https://doi.org/10.1117/12.410087
Publikováno v:
SPIE Proceedings.
The lithography processes for the metal layers of stacked DRAM have normally been considered as one of the most important steps to determine the chip yield performance. The severe topography step-height on the metal resist processes normally leads to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2794b0caa1edae23adc5639679ebe7ca
https://doi.org/10.1117/12.175493
https://doi.org/10.1117/12.175493
Publikováno v:
SPIE Proceedings.
High packing density integrated circuits such as 4 MB DRAM require many interconnect layers. The resulting topography can be very challenging at each layer, particularly for patterning contacts. This paper provides practical techniques for imaging su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eacca48b5af8fe2d437a49c4a2318a65
https://doi.org/10.1117/12.47362
https://doi.org/10.1117/12.47362
Publikováno v:
Advances in Resist Technology and Processing VIII.
A new photoactive compound (PAC) has been developed for a DQN (Diazonaphtho Quinone Novolak) resist system. The PAC is an esterification product of 1,2-naphthoquinone diazide-5-sulfonyl chloride and 2,3,4,4'-tetrahydroxydiphenylmethane (2344-THDM), w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b16b9fa9ca180c92b2bc4b17f2aee93f
https://doi.org/10.1117/12.46395
https://doi.org/10.1117/12.46395
Publikováno v:
Journal of The Electrochemical Society. 148:G434
In this investigation, a novel idea had been proposed to expand the process window and reduce the optical proximity effect (OPE) by employing post-exposure delay (PED). Our previous work presented a model to specify the resist linewidth according to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df699f9a0c05800dd123d1ac613948e
https://doi.org/10.1149/1.1383557
https://doi.org/10.1149/1.1383557
Publikováno v:
Journal of The Electrochemical Society. 147:3833
To elucidate the linewidth variation caused by postexposure delay (PED) in resist films, the distribution of photogenerated acid. the role of additional base component, and the effect of exposure energy were investigated in tert-butoxycarbonyl protec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a246e3fa4e1367f04eccce302273e99
https://doi.org/10.1149/1.1393981
https://doi.org/10.1149/1.1393981
Publikováno v:
Japanese Journal of Applied Physics. 33:7001
The resist development mechanism of both spray puddle and stream puddle methods was addressed in this paper. Two mechanisms were proposed: the pressure effect in which the spray pressure contributes to the development rate of line/space structure lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc093d30614721f5909c2c99b2accc4
https://doi.org/10.1143/jjap.33.7001
https://doi.org/10.1143/jjap.33.7001
Publikováno v:
Japanese Journal of Applied Physics; December 1994, Vol. 33 Issue: 12 p7001-7001, 1p
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