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of 227
pro vyhledávání: '"Hwang, James C. M."'
The impedance of one cubic centimeter of living tissues of potato and guinea pig were measured from 500 Hz to 3 MHz. In general, the magnitude of the impedance was found to monotonically decrease with increasing frequency. This implies that the membr
Externí odkaz:
http://arxiv.org/abs/2105.06428
Akademický článek
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Inverted Scanning Microwave Microscope for In Vitro Imaging and Characterization of Biological Cells
Autor:
Farina, Marco, Jin, Xin, Fabi, Gianluca, Pavoni, Eleonora, di Donato, Andrea, Mencarelli, Davide, Morini, Antonio, Piacenza, Francesco, Hadi, Richard Al, Zhao, Yan, Pietrangelo, Tiziana, Cheng, Xuanhong, Hwang, James C. M.
Publikováno v:
Farina, M. et al. Inverted Scanning Microwave Microscope for In Vitro Imaging and Characterization of Biological Cells. Appl. Phys. Lett. doi.org/10.1063/1.5086259 (2019)
This paper presents for the first time an innovative instrument called an inverted scanning microwave microscope (iSMM), which is capable of noninvasive and label-free imaging and characterization of intracellular structures of a live cell on the nan
Externí odkaz:
http://arxiv.org/abs/1903.04605
Autor:
Xiong, Kuanchen, Li, Lei, Madjar, Asher, Hwang, James C. M., Lin, Zhaoyang, Huang, Yu, Duan, Xiangfeng, Goritz, Alexander, Wietstruck, Matthias, Kaynak, Mehmet
For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 {\deg}C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be re
Externí odkaz:
http://arxiv.org/abs/1803.09906
The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch in CW oper
Externí odkaz:
http://arxiv.org/abs/1708.05064
Autor:
Luo, Xi, Halder, Subrata, Curtice, Walter R., Hwang, James C. M., Chabak, Kelson D., Walker, Jr., Dennis E., Dabiran, Amir M.
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 {\mu}m width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase
Externí odkaz:
http://arxiv.org/abs/1707.09065
Autor:
Jin, Xin, Xiong, Kuanchen, Marstell, Roderick, Strandwitz, Nicholas C., Hwang, James C. M., Farina, Marco, Göritz, Alexander, Wietstruck, Matthias, Kaynak, Mehmet
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMOS process. The results were compared with that obtained by using atomi
Externí odkaz:
http://arxiv.org/abs/1706.07538
Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance as
Externí odkaz:
http://arxiv.org/abs/1603.05156
Autor:
Zhao, Wenwen, Singh, Rishabh, Vishwakarma, Saurabh, Encomendero, Jimy, Nomoto, Kazuki, Li, Lei, Smith, David J., Hwang, James C. M., Xing, Huili G., Jena, Debdeep
Publikováno v:
IEEE Transactions on Electron Devices; August 2024, Vol. 71 Issue: 8 p4968-4976, 9p
This paper reviews the emergence and progress of phosphorene FETs, all within about a year. In such a short time, back-gated FETs evolved into top-gated FETs, gate length was reduced to the sub-micron range, passivation by high-k dielectrics or hexag
Externí odkaz:
http://arxiv.org/abs/1505.00381