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Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors

Autor: Wang, W, Deng, J., Hwang, JC M, Xuan, Y, Ye, P. D.

Publikováno v: Birck and NCN Publications

Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n-channel inversion-mode metal-oxide-semiconductor field-effect transistor (MOSFET). By analyzing the charge pumped under gate voltage pulses of differ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______540::2d4f5c04e6e5fb36fd1b0e3163517a2f
http://docs.lib.purdue.edu/nanopub/648

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