Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Hwan Soo Jang"'
Publikováno v:
IEEE Access, Vol 8, Pp 139156-139160 (2020)
To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process,
Externí odkaz:
https://doaj.org/article/f7ddc6afc1a5438ba3938f5f2ebfda3c
Publikováno v:
IEEE Access, Vol 8, Pp 139156-139160 (2020)
To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c3ac7e335fb657a2b09a761792fd16f
https://ieeexplore.ieee.org/document/9146151/
https://ieeexplore.ieee.org/document/9146151/
Autor:
Dae-Hyun Kim, Young-Woo Jo, Ki-Sik Im, Hwan Soo Jang, In Man Kang, Jae Hwa Seo, Chul-Ho Won, Dong-Hyeok Son, Jung-Hee Lee, Yong Soo Lee
Publikováno v:
Solid-State Electronics. 145:1-7
GaN gate-all-around (GAA) vertical nanowire MOSFET (VNWMOSFET) with channel length of 300 nm and diameter of 120 nm, the narrowest GaN-based vertical nanowire transistor ever achieved from the top-down approach, was fabricated by utilizing anisotropi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24b6835fb8afe853bb097d99dcf0714
https://doi.org/10.1016/j.sse.2018.03.001
https://doi.org/10.1016/j.sse.2018.03.001
Autor:
Jae Hwa Seo, In Man Kang, Young Jun Yoon, Dong-Hyeok Son, Hwan Soo Jang, Jung-Hee Lee, Chul-Ho Won, Young-Woo Jo
Publikováno v:
IEEE Electron Device Letters. 37:855-858
Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width ( $W_{\mathrm{ fin}}$ ) of 120 nm, a fin height ( $H_{\mathrm{ fin}})$ of 250 nm, and a gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00e7bff34a43eeb5b7ba83c4d2439e59
https://doi.org/10.1109/led.2016.2575040
https://doi.org/10.1109/led.2016.2575040
Autor:
Kwang-ho Jang, Kyoungho Suk, Sang-Hyun Kim, Il-Sung Jang, Hwan-Soo Jang, Maan-Gee Lee, Jeoung-Hee Ha, Ji Young Jung
Publikováno v:
Pharmacology Biochemistry and Behavior. 101:217-221
L-theanine has been reported to inhibit the excitatory effects of caffeine. The present study examined the effects of L-theanine on caffeine-induced sleep disturbances in rats. Rats received the following drug pairings: saline and saline (Control), 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9648d17d7cfcfe745b5bf395f547d80e
https://doi.org/10.1016/j.pbb.2012.01.011
https://doi.org/10.1016/j.pbb.2012.01.011
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:3567-3570
We report on the fabrication of silicon nanostructures with a high aspect ratio that were created using a combination of electrochemical etching and alkaline etching. With this technique, we were able to fabricate nano- and/or micro-wire structures t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1f1e4543410a96da9d05b5c4bb4995
https://doi.org/10.1166/jnn.2012.5591
https://doi.org/10.1166/jnn.2012.5591
Autor:
Seong-Ho Baek, Jin Woo Han, Hwan Soo Jang, Jeong-hwan Kim, Byeong Yun Oh, Gi Seok Heo, Tae-Won Kim, Dae Shik Seo, Jae Hyun Kim, Ho-Jin Choi, Kwang Young Kim
Publikováno v:
Current Applied Physics. 12:273-279
Structural, electrical, and optical properties of atomic layer-controlled Al-doped ZnO (ZnO:Al) films grown by atomic layer deposition (ALD) on glass substrates were characterized at various growth temperatures for use as transparent electrodes. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035d635a85fa707efdfbdd7e5456af88
https://doi.org/10.1016/j.cap.2011.06.017
https://doi.org/10.1016/j.cap.2011.06.017
Publikováno v:
Current Applied Physics. 11:S30-S33
The characteristics of optical absorption and photovoltaic properties of silicon(Si) wire solar cells with different aspect ratio have been studied. Vertically aligned Si wire arrays were fabricated by electrochemical etching and p–n junction was p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa8ebc9fbd4cb16f955775e38c8ebfd
https://doi.org/10.1016/j.cap.2010.11.040
https://doi.org/10.1016/j.cap.2010.11.040
Publikováno v:
Current Applied Physics. 11:S34-S38
We present optimization of electrochemical etching process in p-type silicon because the formation of p-type ordered porous silicon or silicon wire arrays has not been well documented compared with n-type ones. In order to prepare and fabricate p-typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc545586afcf7849988ed669a1945d2f
https://doi.org/10.1016/j.cap.2010.11.037
https://doi.org/10.1016/j.cap.2010.11.037
Publikováno v:
Journal of The Electrochemical Society. 159:D37-D45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6b2ccf0421266e3abfe5a552c6a71ba
https://doi.org/10.1149/2.001202jes
https://doi.org/10.1149/2.001202jes