Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Hwan Hee Jeong"'
Autor:
Sung-Jae Chang, Kyu-Jun Cho, Sang-Youl Lee, Hwan-Hee Jeong, Jae-Hoon Lee, Hyun-Wook Jung, Sung-Bum Bae, Il-Gyu Choi, Hae-Cheon Kim, Ho-Kyun Ahn, Jong-Won Lim
Publikováno v:
Crystals, Vol 11, Iss 11, p 1414 (2021)
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs
Externí odkaz:
https://doaj.org/article/499bcfa0b2c14cde967ac96b2b7f0f8e
Autor:
Hiroshi Amano, Eunduk Lee, Jihyung Moon, Byoungjun Choi, Sang-Youl Lee, Tae Yeon Seong, Jeong-Tak Oh, Hwan-Hee Jeong
Publikováno v:
IEEE Photonics Technology Letters. 32:1041-1044
We investigated the effect of plasma-etching on the electrical and optical performance of lateral AlGaInP-based red micro-LEDs as a function of etching time, where plasma-etched Ag particles were used as masks. For the sample etched for 12 s, around
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f61f69903cea655cdcdccbf76efd583
https://doi.org/10.1109/lpt.2020.3010820
https://doi.org/10.1109/lpt.2020.3010820
Autor:
Chung Song Kim, Sunwoo Park, Jeong-Tak Oh, Hwan-Hee Jeong, Tae Yeon Seong, Hiroshi Amano, Ji Hyung Moon, Sang-Youl Lee, Yong-Tae Moon
Publikováno v:
IEEE Photonics Technology Letters. 32:438-441
We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) ( $25\times 17\,\,\mu \text{m}^{2}$ ) were influenced by the use of $n$ -AlInP ohmic layer and distributed Bragg reflector (DBR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ef503b15fe55dc9755c0883c393308
https://doi.org/10.1109/lpt.2020.2977376
https://doi.org/10.1109/lpt.2020.2977376
Autor:
June O. Song, Hwan Hee Jeong, Hiroshi Amano, Ho Young Kim, Ki Seok Kim, Tae Yeon Seong, Lim Chang Man, Jeong Tak Oh
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q165-Q170
We investigated the effect of via-holes in the lead-frame on the reliability of blue flip-chip light-emitting diodes (FCLEDs). For bonding, conventional Sn-Ag(3.0%)-Cu(0.5%) solder (SAC) and Ag sintered paste were adopted. Lateral LED, conventional F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50782eaa4ab29aad38d13f0247cdc68a
https://doi.org/10.1149/2.0171909jss
https://doi.org/10.1149/2.0171909jss
Autor:
Dae Hee Lee, Sang Youl Lee, Se Yeon Jung, Young Kyu Jeong, Tae Yeon Seong, Young Hoon Kim, Woong Sun Yum, Ji Hyun Koo, Hwan Hee Jeong
Publikováno v:
Electronics
Volume 10
Issue 8
Electronics, Vol 10, Iss 975, p 975 (2021)
Volume 10
Issue 8
Electronics, Vol 10, Iss 975, p 975 (2021)
We investigated the effect of Ti/Al and ITO/Ag n-type contacts on the emission uniformity and light output of different chip-size vertical-geometry light-emitting diodes (VLEDs) for vehicle headlamp application. The forward voltage of the Ti/Al-based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::56767eda41d0664540044ff443b9d0b5
Autor:
Won Jung Kim, Gyu Hyeong Bak, Hwan Hee Jeong, June O. Song, Sun Woo Oh, Suk Bum Yoon, Hyun Ho Sung, Tae Yeon Seong
Publikováno v:
ECS Transactions. 85:67-72
Light-emitting diodes (LEDs) have been widely applied for backlight unit for displays, general lighting, and automotive illumination because they have a high light efficiency and long life time, and are environmentally friendly. These diverse applica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68e14f7fe876f3854df7437004449a17
https://doi.org/10.1149/08507.0067ecst
https://doi.org/10.1149/08507.0067ecst
Autor:
Hokyun Ahn, Jong-Won Lim, Haecheon Kim, Sungjae Chang, Sang-Youl Lee, Hyun-Wook Jung, Hwan-Hee Jeong, Il-Gyu Choi, Jae-Hoon Lee, Kyu-Jun Cho, Sung-Bum Bae
Publikováno v:
Crystals; Volume 11; Issue 11; Pages: 1414
Crystals, Vol 11, Iss 1414, p 1414 (2021)
Crystals, Vol 11, Iss 1414, p 1414 (2021)
We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::725dfe926385aa13e48f27d7d060e6df
https://doi.org/10.3390/cryst11111414
https://doi.org/10.3390/cryst11111414
Autor:
Tae Yeon Seong, Sang Youl Lee, Jeong Tak Oh, Yoomin Jo, Kiman Kang, Doyub Kim, Hwan Hee Jeong, Se Yeon Jung, Eunduk Lee
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:045003
We investigate the effects of pixel distance and light emitting diode (LED) thickness on the luminance distribution and contrast ratio of a 16 × 16 blue and white LED array for vehicle headlamp application. With increasing pixel distance from 10 to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3396b909d014d842c9bf7b32ffbed81e
https://doi.org/10.1149/2162-8777/abf47d
https://doi.org/10.1149/2162-8777/abf47d
Autor:
Woong Sun Yum, Hyunsoo Lim, Tae Yeon Seong, Hwan Hee Jeong, Sang Youl Lee, Jeong Tak Oh, Rak Jun Choi
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:045002
We investigated the electrical and optical performance and reliability of 278 nm deep ultraviolet (DUV) AlGaN-based flip-chip light-emitting diodes (FCLEDs) fabricated with ITO/Al and reference Ni/Au contacts. The DUV FCLEDs with the Ni/Au and ITO/Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5fc6925c09af9a6c560f086d5649c0
https://doi.org/10.1149/2162-8777/abf0e9
https://doi.org/10.1149/2162-8777/abf0e9
Autor:
Ho Young Kim, Kyoung Mo Kang, Kwang Ho Park, Tae Yeon Seong, Young Min Moon, Jong Woo Lee, Hwan Hee Jeong, Jae Moon Lee, Jeong Tak Oh
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:015004
We investigated the effect of different types of die attach adhesives on the performance and reliability of InGaN-based LED packages. At 260 °C, the average shear strength was 10.00 and 22.30 MPa for Ag epoxy and Ag sinter paste samples, respectivel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e00257a94b70c134678214b8318bc12
https://doi.org/10.1149/2162-8777/abdc44
https://doi.org/10.1149/2162-8777/abdc44