Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Hwa-Sub Oh"'
Autor:
Jin Soo So, Hyung Joo Lee, Jun-Beom Park, Tak Jeong, Hwa Sub Oh, Jong-Min Park, Seonghoon Jeong, Kyung Nam Jeon
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:3824-3828
We studied broad-spectrum light emitting diodes appropriate for special lighting applications in terms of their optical behaviors and device performances according to the chirped multi-quantum well structures. As the well thickness from 1 st to 3rd w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5873ed553d66f7df3aab3a72553fa1e7
https://doi.org/10.1166/jnn.2021.19215
https://doi.org/10.1166/jnn.2021.19215
Autor:
Young Tae Park, Sung Hoon Jung, Seok Ho Kwon, Kang Seok Lee, Dong Wook Lee, Hwa Sub Oh, Jong-Min Park
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:2219-2223
We investigated broad-spectrum light emitting diodes appropriate for special lighting applications in terms of their optical behaviors and device performances according to the chirped multi-quantum well structures. As the well thickness was increased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae7a9d4a29200c197894c256521a6d01
https://doi.org/10.1166/jnn.2019.15972
https://doi.org/10.1166/jnn.2019.15972
Autor:
Jung Sh, Tae-Young Jung, Hwa Sub Oh, Song Ar, Jong Hyeob Baek, Hyunjoo Lee, Young-Jin Kim, Young Dae Cho
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:1867-1870
We investigated high-brightness light emitting diodes appropriate for general lighting applications in terms of their optical behaviors and device performances according to the insertion of the sloped barrier between the well and the barrier and chan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6ca55098a34aee6eaa3a6ffff939f86
https://doi.org/10.1166/jnn.2016.12022
https://doi.org/10.1166/jnn.2016.12022
Autor:
Hwa Sub Oh
Publikováno v:
ECS Meeting Abstracts. :1366-1366
(AlxGa1-x)0.5In0.5P-based LEDs have a small conduction band offset that limits their electron confining potential.1 This weaker electron confinement subsequently leads to electron heterobarrier leakage in AlGaInP heterostructure LEDs, especially in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb9a9e74fb62559021dd18a2c30d4006
https://doi.org/10.1149/ma2020-01231366mtgabs
https://doi.org/10.1149/ma2020-01231366mtgabs
Autor:
Hyung Jo Park, Sang-Mook Kim, Jong Hyeob Baek, Ja-Yeon Kim, Tak Jeong, Sang Hern Lee, Hwa Sub Oh
Publikováno v:
Topics in Applied Physics ISBN: 9789811037542
This chapter deals with methods for fabricating high-efficient light-emitting diodes (LEDs) with higher light extraction efficiency (LEE). Some LED prototypes are then reviewed to investigate how their performance was enhanced by utilizing a variety
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ee039dc6e8462fadf140c2deda0738f
https://doi.org/10.1007/978-981-10-3755-9_12
https://doi.org/10.1007/978-981-10-3755-9_12
Autor:
Ho Soung Ryu, Joon Mo Park, Jong Hyeob Baek, Hwa Sub Oh, Young-Jin Kim, Joon Seop Kwak, In Kyu Jang, Ji Hoon Park, Hyung Joo Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 14:6124-6127
We investigated 590 nm light-emitting diodes appropriate for full-color display applications in terms of their electrical and optical behaviors during operation according to their Mg doping profile in the p-cladding layer. As the hole concentration i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15e4ab14e54f59880c651873d2723a3
https://doi.org/10.1166/jnn.2014.8320
https://doi.org/10.1166/jnn.2014.8320
High Efficiency InGaN Blue Light-Emitting Diode With ${>}{\rm 4}\hbox{-}{\rm W}$ Output Power at 3 A
Autor:
Tak Jeong, Jong-Hyeob Baek, Han-Youl Ryu, Jun-Seok Ha, Hyung-Jo Park, Hwa Sub Oh, Jin-Woo Ju, Guen-Hwan Ryu
Publikováno v:
IEEE Photonics Technology Letters. 26:649-652
This letter reports high-power and high-efficiency characteristics of the InGaN-based blue light-emitting diode (LED) operating at > 10-W electrical input power in a single-chip package. The LED chip is fabricated as a vertical-injection structure wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb4636544d8f95f980d3eaa932f2695e
https://doi.org/10.1109/lpt.2014.2301874
https://doi.org/10.1109/lpt.2014.2301874
Publikováno v:
ECS Meeting Abstracts. :1313-1313
Recently, AlGaInP-based light emitting diodes (LEDs) have experienced an impressive evolution in both device performance and market volume. However, development of new applications is required in order to realize their full potential in areas such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bac5e2b2b726d2e7d13b5e304b15c8a3
https://doi.org/10.1149/ma2019-02/30/1313
https://doi.org/10.1149/ma2019-02/30/1313
Autor:
In Kyu Jang, Hwa Sub Oh, Joon Seop Kwak, Ji Hoon Park, Jong Hyeob Baek, Hyung Joo Lee, Joon Mo Park, Young-Jin Kim, Ho Soung Ryu
Publikováno v:
Journal of Nanoscience and Nanotechnology. 13:564-567
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3-dimensional dots as the nominal growth thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::535256ae60831e62bca3fbca7cd2f8c1
https://doi.org/10.1166/jnn.2013.6939
https://doi.org/10.1166/jnn.2013.6939
Autor:
DukHyun Park, JaeWon Seo, Young Ho Park, SeongWook Ryu, HyunDon Song, Joon Seop Kwak, KyungWook Park, Hwa-Sub Oh
Publikováno v:
Journal of the Korean Physical Society. 55:314-317
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cc2fe179859cd6297c6718bd9e5e1f4
https://doi.org/10.3938/jkps.55.314
https://doi.org/10.3938/jkps.55.314