Zobrazeno 1 - 10 of 13 pro vyhledávání: '"Hwa Seob Kim"'
1
Inversion domain boundary structure of laterally overgrown c-GaN domains including the inversion from Ga to N polarity at a mask pattern boundary
Autor: Dongsoo Jang, Hyunkyu Lee, Hwa Seob Kim, Donghoi Kim, Chinkyo Kim
Publikováno v: Journal of Applied Crystallography. 51:1551-1555
During epitaxial lateral overgrowth, the lateral polarity inversion of c-GaN domains from Ga to N polarity, triggered at the boundary of an SiO2 mask pattern, resulted in inversion domain boundaries (IDBs) forming preferentially on the \{11{\overline
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f6540aee0d8bf6c9c0bb5cd0585ff51a
https://doi.org/10.1107/s160057671801350x
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3
Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor
Autor: Donghoi Kim, Dongsoo Jang, Chinkyo Kim, Hyunkyu Lee, Hwa Seob Kim
Publikováno v: Journal of Materials Chemistry C. 6:6264-6269
The polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor at temperatures of 750 and 810 °C was investigated. For N-polar GaN, some regions were severely etched in such a way that vertically-alig
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a47138761ae82277d2692ed93d3666a
https://doi.org/10.1039/c8tc01640b
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5
Optical characterization of the PtSi/Si by using spectroscopic ellipsometry
Autor: Han Gyeol Park, Seung Eon Moon, Won-Chul Choi, Van Long Le, Tae Jung Kim, Hwa Seob Kim, Solyee Im, Chang Hyun Yoo, Eun Soo Nam, Hyoung Uk Kim, Junsoo Kim, Young Dong Kim
Publikováno v: Journal of the Korean Physical Society. 69:291-296
We report an optical characterization of PtSi films for thermoelectric device applications which was done by using nondestructive spectroscopic ellipsometry (SE). A Pt monolayer and a Pt-Si multilayer which consisted of three pairs of Pt and Si layer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c18d61ccd8b668f8f5661f1231fac1e5
https://doi.org/10.3938/jkps.69.291
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6
Temperature dependence of the critical points of monolayer MoS2by ellipsometry
Autor: Maeng-Je Seong, Han Gyeol Park, Hyoung Uk Kim, Chinh Tam Le, V. Senthilkumar, Nilesh Barange, Chang Hyun Yoo, Hwa Seob Kim, Van Long Le, Tae Jung Kim, Yong Soo Kim, Young Dong Kim
Publikováno v: Applied Spectroscopy Reviews. 51:621-635
We report the complex pseudodielectric function of molybdenum disulfide (MoS2) monolayers for energies from 1.40 to 6.42 eV and temperatures from 35 to 350 K. MoS2 was grown as a continuous monolayer on a SiO2/Si substrate in a two zone hot-wall furn
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f187b8bd773c6835167eb5ca4411dc1c
https://doi.org/10.1080/05704928.2016.1166436
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7
Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN
Autor: Chinkyo Kim, Hwa Seob Kim, Dongsoo Jang, Hyunkyu Lee, Miyeon Jue, Donghoi Kim
Publikováno v: Scientific Reports
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
On an SiO2-patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::972da95abc29fc26f112ff1a3b199ef8
https://pubmed.ncbi.nlm.nih.gov/29515140
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