Zobrazeno 1 - 10
of 1 730
pro vyhledávání: '"Huynh V"'
Autor:
M. E. Mora-Ramos, J. A. Vinasco, D. Laroze, A. Radu, R. L. Restrepo, Christian Heyn, V. Tulupenko, Nguyen N. Hieu, Huynh V. Phuc, J. H. Ojeda, A. L. Morales, C. A. Duque
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-16 (2021)
Abstract We theoretically investigate the electron and hole states in a semiconductor quantum dot-quantum ring coupled structure, inspired by the recent experimental report by Elborg and collaborators (2017). The finite element method constitutes the
Externí odkaz:
https://doaj.org/article/fe3666c71b104b12939f93f1b673997f
Publikováno v:
Tạp chí Khoa học Đại học Huế: Khoa học Tự nhiên, Vol 130, Iss 1B (2021)
We study the linear, third-order nonlinear, and total absorption coefficients (OACs) caused by intra- and inter-band transitions in monolayer MoSe2 in the presence of a magnetic field by using the compact density matrix approach. The results show tha
Externí odkaz:
https://doaj.org/article/cc0c59a30523454fb1601f70f0737e05
Publikováno v:
AIP Advances, Vol 8, Iss 7, Pp 075207-075207-9 (2018)
In this work, we theoretically investigate electronic properties of GaSeMoS2 and GaSMoSe2 heterojunctions using density functional theory based on first-principles calculations. The results show that both GaSeMoS2 and GaSMoSe2 heterojunctions are cha
Externí odkaz:
https://doaj.org/article/5116e89d96ec4664b8931ea31bee9b2e
Publikováno v:
Journal of Eastern European and Central Asian Research, Vol 5, Iss 1 (2018)
The empirical results of this study reveal the following interesting characteristics of the Romanian banking sector over the December 1993 through August 2017 period. First, the spread between the lending-Central Bank’s discount rates was stable an
Externí odkaz:
https://doaj.org/article/f88448970aa4410ea0dc8da9088f5bc7
Publikováno v:
Journal of Applied Physics; 9/28/2024, Vol. 136 Issue 12, p1-11, 11p
Autor:
Vu, Tuan V., Hiep, Nguyen T., Phuc, Huynh V., Hoi, Bui D., Linh, Tran P.T., Kartamyshev, A.I., Hieu, Nguyen N.
Publikováno v:
In Surfaces and Interfaces September 2024 52
Autor:
Hiep, Nguyen T., Khan, Dinh T., Thao, Le T.P., Nguyen, Cuong Q., Hoi, Bui D., Phuc, Huynh V., Hieu, Nguyen N.
Publikováno v:
In Materials Science in Semiconductor Processing February 2025 186
Autor:
Hieu, Nguyen N., Hieu, Nguyen V., Le-Quoc, Huy, Vi, Vo T.T., Nguyen, Cuong Q., Nguyen, Chuong V., Phuc, Huynh V., Nguyen-Ba, Kien
Publikováno v:
In Chemical Physics 1 July 2024 583
Autor:
Kartamyshev, A.I., Hieu, Nguyen N., Poklonski, N.A., Hieu, Nguyen V., Vu, Tuan V., Lavrentyev, A.A., Phuc, Huynh V.
Publikováno v:
In Materials Science in Semiconductor Processing 1 March 2025 187
Autor:
Kubakaddi, S. S., Phuc, Huynh V.
The power loss $P$ of hot Dirac fermions through the coupling to the intrinsic intravalley and intervalley acoustic and optical phonons is analytically investigated in silicene as a function of electron temperature $T_e$ and density $n_s$. At very lo
Externí odkaz:
http://arxiv.org/abs/2008.09353
