Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Husni Habal"'
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 39:1372-1385
The charge-redistribution data converter topology is constructed from an array of parallel-connected capacitors with a specific capacitor ratio, and is a fundamental component of successive approximation register (SAR)-analog-to-digital converter (AD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680dbc91bf60f5b22eff1bc541479b9e
https://doi.org/10.1109/tcad.2019.2912921
https://doi.org/10.1109/tcad.2019.2912921
Publikováno v:
MLCAD
Simple MOSFET models intended for hand analysis are inaccurate in deep sub-micrometer process technologies and in the moderate inversion region of device operation. Accurate models, such as the Berkeley BSIM6 model, are too complex for use in hand an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ba106ba3e33a76326d860a32c75fc0f
https://doi.org/10.1145/3380446.3430632
https://doi.org/10.1145/3380446.3430632
Publikováno v:
Optimization Letters. 13:1557-1571
In this paper, a new derivative-free method for Worst Case Analysis (WCA) of circuit design is defined. A WCA of a device can be performed by solving a particular minimization problem where the objective function values are obtained by a simulation c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c4eb1ff409f4e9194067934d76f8af7
https://doi.org/10.1007/s11590-018-1364-5
https://doi.org/10.1007/s11590-018-1364-5
Publikováno v:
PRIME
In this paper, we address the novel EDP (Expert Design Plan) principle for procedural design automation of analog integrated circuits, which captures the knowledge-based design strategy of human circuit designers in an executable script, making it re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5769fd93229c4cf1755979a0be8898e
https://doi.org/10.1109/prime.2019.8787743
https://doi.org/10.1109/prime.2019.8787743
Autor:
Helmut Graeb, Husni Habal
Publikováno v:
Microelectronics Reliability. 61:17-23
A compact add-on model is proposed to simulate the mechanism of charge trapping and release (detrapping) and its effect on the threshold voltage of MOSFET devices. The model uses implicit algebraic differential equations compatible with transient ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36eae86b3dc2e7fb85f4cf3478d76363
https://doi.org/10.1016/j.microrel.2016.01.001
https://doi.org/10.1016/j.microrel.2016.01.001
Publikováno v:
DAC
This paper presents a new approach to capacitor placement in differential charge-scaling data converters. Good capacitor matching is crucial for charge-scaling converter resolution. Differential circuits are preferred to single-ended architectures du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adb9745400b870cc255f3d7b58865fba
https://doi.org/10.1145/2897937.2898073
https://doi.org/10.1145/2897937.2898073
Publikováno v:
2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).
A novel, complete analytical model is derived for the static behavior of a monotonic-switching differential charge-scaling ADC in terms of capacitor variations. Expressions derived for the transition voltages significantly reduce the cost of ADC tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da223ed2ff41bce3dfb49eda3ce502e2
https://doi.org/10.1109/prime.2016.7519453
https://doi.org/10.1109/prime.2016.7519453
Autor:
Husni Habal, Helmut Graeb
Publikováno v:
ICICDT
A flow is presented to evaluate analog CMOS circuit performance pending temporal MOSFET degradation. The change in threshold voltage due to the bias temperature instability (BTI) mechanism is used as a paradigm. The tasks of performance evaluation an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa42188bbe246496089e2d939b7344a8
https://doi.org/10.1109/icicdt.2013.6563299
https://doi.org/10.1109/icicdt.2013.6563299