Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Hushan Cui"'
Autor:
Henry H. Radamson, Yuanhao Miao, Ziwei Zhou, Zhenhua Wu, Zhenzhen Kong, Jianfeng Gao, Hong Yang, Yuhui Ren, Yongkui Zhang, Jiangliu Shi, Jinjuan Xiang, Hushan Cui, Bin Lu, Junjie Li, Jinbiao Liu, Hongxiao Lin, Haoqing Xu, Mengfan Li, Jiaji Cao, Chuangqi He, Xiangyan Duan, Xuewei Zhao, Jiale Su, Yong Du, Jiahan Yu, Yuanyuan Wu, Miao Jiang, Di Liang, Ben Li, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 837 (2024)
After more than five decades, Moore’s Law for transistors is approaching the end of the international technology roadmap of semiconductors (ITRS). The fate of complementary metal oxide semiconductor (CMOS) architecture has become increasingly unkno
Externí odkaz:
https://doaj.org/article/4ec18820053d48f8b361b57d88c68aa2
Publikováno v:
Biotechnology and Bioprocess Engineering. 27:921-929
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2240995faed991a663989490a09128f5
https://doi.org/10.1007/s12257-022-0110-0
https://doi.org/10.1007/s12257-022-0110-0
Autor:
Henry H. Radamson, Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Hushan Cui, Jianfeng Gao, Hong Yang, Yong Du, Buqing Xu, Ben Li, Xuewei Zhao, Jiahan Yu, Yan Dong, Guilei Wang
Publikováno v:
Nanomaterials, Vol 10, Iss 8, p 1555 (2020)
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s tr
Externí odkaz:
https://doaj.org/article/1e19463b7889450dac09ad0268d34ded
Autor:
Henry H. Radamson, Xiaobin He, Qingzhu Zhang, Jinbiao Liu, Hushan Cui, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Jianfeng Gao, Hong Yang, Shihai Gu, Xuewei Zhao, Yong Du, Jiahan Yu, Guilei Wang
Publikováno v:
Micromachines, Vol 10, Iss 5, p 293 (2019)
When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically chan
Externí odkaz:
https://doaj.org/article/d397c826ee564bb4b63ddc6b6ca98977
Autor:
Jiaqi Wei, Hu Yanpeng, Weisheng Zhao, Kaihua Cao, Lezhi Wang, Wenlong Cai, Qifeng Jiang, Huisong Li, Chao Zhao, Hushan Cui
Publikováno v:
IEEE Transactions on Magnetics. 55:1-4
The temperature dependence of magnetoresistance and switching characterization based on spin transfer torque (STT) effect of perpendicular magnetic tunnel junctions (p-MTJs) with MgO/CoFeB/W/CoFeB/MgO double-interface free layer was studied. The tunn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f71bf735d70f1015ef9721a39b5c93
https://doi.org/10.1109/tmag.2018.2877446
https://doi.org/10.1109/tmag.2018.2877446
Autor:
Chao Zhao, Yihong Lu, Lezhi Wang, Bai Guobin, Huagang Xiong, Lin Li, Zhang Yue, Jiaqi Wei, Shi Liu, Junjie Li, Jianghao Han, Weisheng Zhao, Pan Liu, Henry H. Radamson, Jianfeng Gao, Junfeng Li, Peng Zhang, Jiahan Yu, Wenlong Cai, Kaihua Cao, Hu Yanpeng, Youguang Zhang, Bo Tang, Xiaobin He, Qifeng Jiang, Qihui Zhang, Yizheng Liu, Hushan Cui, Tao Yang
Publikováno v:
Microelectronic Engineering. 209:6-9
In this work, a novel method consisting of side-wall passivation and a top-metal reveal process is proposed for spintronics devices based on magnetic tunnel junctions (MTJs). The method can efficiently protect ferromagnetic metals and magnesium oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b803163ee072bc76b4d2704c140f1538
https://doi.org/10.1016/j.mee.2019.01.010
https://doi.org/10.1016/j.mee.2019.01.010
Autor:
Henry H. Radamson, Yanbo Zhang, Xiaobin He, Hushan Cui, Junjie Li, Jinjuan Xiang, Jinbiao Liu, Shihai Gu, Guilei Wang
Publikováno v:
Applied Sciences, Vol 7, Iss 10, p 1047 (2017)
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development
Externí odkaz:
https://doaj.org/article/4313c1810c514d67bb1f5881b69764ff
Autor:
Kaidong Xu, Xinying Shi, Jie Yuan, Ding Guanghui, Hushan Cui, Jiale Tang, Lulu Guan, Yudong Zhang, Shiwei Zhuang, Xingyu Li, Yongjie Hu
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb82825b1db8f82597b8837aaac8f56c
https://doi.org/10.1109/cstic52283.2021.9461495
https://doi.org/10.1109/cstic52283.2021.9461495
Autor:
Hushan Cui, Zhonghua Liu
Publikováno v:
DEStech Transactions on Engineering and Technology Research.
The temperature characteristics of the brake disc will affect the material properties and stress characteristics and affect the safe operation of the train. In order to study the temperature distribution of the brake disc during the operation, a thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::943dc148cd21a590f20ee9abf8aa2131
https://doi.org/10.12783/dtetr/mcaee2020/35041
https://doi.org/10.12783/dtetr/mcaee2020/35041
Autor:
Wenjuan Xiong, Jianfeng Gao, Zhenhua Wu, Hushan Cui, Jinbiao Liu, Yong Du, Ben Li, Zhenzhen Kong, Xiaobin He, Hongxiao Lin, Buqing Xu, Junjie Li, Guilei Wang, Jiahan Yu, Xuewei Zhao, Huilong Zhu, Henry H. Radamson, Yan Dong, Hong Yang, Jinjuan Xiang
Publikováno v:
Nanomaterials, Vol 10, Iss 1555, p 1555 (2020)
Nanomaterials
Nanomaterials
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0c9cd497e80f177d0785a9d8b83394e
http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-39876
http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-39876
