Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Huseyin Sar"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract Two-dimensional (2D) material of silicon phosphide (SiP) has recently been shown as a promising optical material with large band gap, fast photoresponse and strong anisotropy. However, the nonlinear optical properties of 2D SiP have not been
Externí odkaz:
https://doaj.org/article/b7c02d0e1d6545468b348da48126786e
Autor:
David Coenen, Huseyin Sar, Herman Oprins, Aleksandrs Marinins, Yannick De Koninck, Stuart Smyth, Yoojin Ban, Joris Van Campenhout, Ingrid De Wolf
Publikováno v:
Micromachines, Vol 14, Iss 2, p 381 (2023)
WA detailed thermal analysis of a hybrid, flip-chip InP-Si DFB laser is presented in this work. The lasers were experimentally tested at different operating temperatures, which allowed for deriving their thermal performance characteristics: the tempe
Externí odkaz:
https://doaj.org/article/f70b93001dc94d289e969476e2ce6168
Autor:
Aleksandrs Marinins, Sebastian Hansch, Huseyin Sar, Francois Chancerel, Negin Golshani, Hsiao-Lun Wang, Artemisia Tsiara, David Coenen, Peter Verheyen, Giovanni Capuz, Yannick De Koninck, Ozan Yilmaz, Geert Morthier, Filip Schleicher, Geraldine Jamieson, Stuart Smyth, Andrew McKee, Yoojin Ban, Marianna Pantouvaki, Douglas Charles La Tulipe, Joris Van Campenhout
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. :1-11
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Scientific Reports
Scientific Reports
Two-dimensional (2D) material of silicon phosphide (SiP) has recently been shown as a promising optical material with large band gap, fast photoresponse and strong anisotropy. However, the nonlinear optical properties of 2D SiP have not been investig
Publikováno v:
Materials Science in Semiconductor Processing. 93:158-163
Large area, single layer WS2 has a high potential for use in optoelectrical devices with its high photoluminescence intensity and low response time. In this work, we demonstrate a systematic study of controlled tungsten disulfide (WS2) monolayer grow
Autor:
Savas Delikanli, Mustafa Demirtaş, Huseyin Sar, Feridun Ay, Hilmi Volkan Demir, Nihan Kosku Perkgoz, Nima Taghipour, Ibrahim Wonge Lisheshar
Publikováno v:
Advanced Optical Materials
A phototransistor built by the assembly of 2D colloidal semiconductor quantum wells (CQWs) on a single layer of 2D transition metal dichalcogenide (TMD) is displayed. This hybrid device architecture exhibits high efficiency in Forster resonance energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec28af528ba4b21b2bb5e02e5e50a8bf
https://hdl.handle.net/11693/75648
https://hdl.handle.net/11693/75648
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-10 (2020)
Scientific Reports
Scientific Reports
A newly introduced two-dimensional (2D) layered germanium arsenide (GeAs) has attracted growing interest due to its promising highly in-plane anisotropic crystal structure and electronic properties for photonic and optoelectronic applications. The po
WOS: 000430496800092
In this study, optical and electronic transport properties of chemical vapor deposition (CVD) grown 2D WS2 and MoS2 based transistors and photodetectors are investigated and compared in ambient air by using 2D flakes grown w
In this study, optical and electronic transport properties of chemical vapor deposition (CVD) grown 2D WS2 and MoS2 based transistors and photodetectors are investigated and compared in ambient air by using 2D flakes grown w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f85cb1e3313e910ce30ddc9a71be375
https://hdl.handle.net/11421/20432
https://hdl.handle.net/11421/20432
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 13:1800687
Autor:
Huseyin Sar, Ayberk Özden, Nihan Kosku Perkgoz, Aydan Yeltik, Feridun Ay, Cem Sevik, Büşra Madenoğlu
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 10