Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Hurwitz Paul D"'
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
Device stacking in the PCM RF switch technology is demonstrated for the first time to significantly improve OFF-state voltage and power handling capability. Due to the extremely low C OFF of the unit device, traditional device stacking is both limite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8047bfd2be635444ae2824e099147bc2
https://doi.org/10.1109/ims19712.2021.9574954
https://doi.org/10.1109/ims19712.2021.9574954
Publikováno v:
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Using a multiple gated transistor core (MGTR) with different channel lengths, a 5.4GHz LNA in 130nm SOI CMOS is demonstrated. Using a 1V supply and consuming 3mA current, LNA has 10.8dB gain, 0.65dB NF, 6dBm IIP3. The LNA is matched at input and outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f4d35fd553d9afd644f1725b5becdf
https://doi.org/10.1109/sirf51851.2021.9383421
https://doi.org/10.1109/sirf51851.2021.9383421
Autor:
Kurt A. Moen, Hurwitz Paul D
Publikováno v:
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
A novel RF switch branch design and layout is proposed to reduce on-state second harmonic nonlinearity. We have demonstrated a 2.5X reduction in the second harmonic power in RF-SOI and SiGe BiCMOS bulk technologies that serve the wireless front-end m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e68138c07bfd400fbaea2bfd909ed3
https://doi.org/10.1109/sirf.2018.8304214
https://doi.org/10.1109/sirf.2018.8304214
Publikováno v:
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Improvements in foundry RF and mm-wave Si offerings over the last several years have allowed it to take market share from III-V processes for TX / RX applications. The increased RF switch content in handsets is now dominated by RF-SOI which also supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea8d84cdf22b2a0fc236aa01ebd782b
https://doi.org/10.1109/sirf.2016.7445453
https://doi.org/10.1109/sirf.2016.7445453
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc0a708bbbe9265df04ef07fc4da547
https://doi.org/10.1109/vlsi-tsa.2014.6839697
https://doi.org/10.1109/vlsi-tsa.2014.6839697
Autor:
Hurwitz Paul D, David Howard, Yasir Qamar, Arjun Kar-Roy, Richard Mann, M. Racanelli, S. Chaudhry, Robert L. Zwingman
Publikováno v:
SPIE Proceedings.
Increasingly complex specifications for next-generation focal plane arrays (FPAs) require smaller pixels, larger array sizes, reduced power consumption and lower cost. We have previously reported on the favorable features available in the commerciall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::161095017081c2af6af45473046951ca
https://doi.org/10.1117/12.919566
https://doi.org/10.1117/12.919566
Autor:
Arjun Kar-Roy, S. Chaudhry, Scott Jordan, Marco Racanelli, Robert L. Zwingman, Hurwitz Paul D, Mike Scott, Howard David J
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications VII.
Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47848b4ec1cb0475dcb6ab392ab0059a
https://doi.org/10.1117/12.865173
https://doi.org/10.1117/12.865173
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BV ceo values up to 6V. The bipolar architecture is nearly identical with that used in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::829b2fdbcd41baa0fee96e51f2f9e4ae
https://doi.org/10.1109/bipol.2010.5667972
https://doi.org/10.1109/bipol.2010.5667972
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
SiGe bipolar transistors with FT of 270 GHz are integrated within a standard 0.18 mum CMOS process flow. These devices are built using the same architecture as Jazzpsila SBC18 SiGe BiCMOS process which has been in high-volume manufacturing for severa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ee31c2499fe59d6f4ec001aab1809f1
https://doi.org/10.1109/bipol.2008.4662728
https://doi.org/10.1109/bipol.2008.4662728
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
Both NPN and PNP bipolar transistors are modularly integrated at low cost into standard 0.18 mum and 0.13 mum CMOS process flows. The bipolar modules are of low complexity and thus cost, using only 4 dedicated masks for the NPN and only 2 for the PNP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda83d11a43b71f3931a1c3553b4f1b1
https://doi.org/10.1109/bipol.2008.4662722
https://doi.org/10.1109/bipol.2008.4662722