Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Hurwitz, Paul"'
Autor:
Steven Heeringa, Wagner, James, Kessler, Ronald C., Cox, Kenneth, Aliaga, Pablo A., Benedek, David M., Campbell-Sills, Laura, Fullerton, Carol S., Gebler, Nancy, Gifford, Robert K., House, Meredith, Hurwitz, Paul E., Jain, Sonia, Kao, Tzu-Cheg, Lewandowski-Romps, Lisa, Mash, Holly Herberman, McCarroll, James E., Naifeh, James A., Hinz Ng, Tsz Hin, Nock, Matthew K., Sampson, Nancy A., Santiago, Patcho, Wynn, Gary H., Zaslavsky, Alan M., Zuromski, Kelly L., Bernecker, Samantha L., Chu, Carol, Wilks, Chelsey R., Gutierrez, Peter M., Joiner, Thomas E., Liu, Howard, Stein, Murray B., Ursano, Robert J.
Publikováno v:
In Journal of Psychiatric Research February 2020 121:214-221
Autor:
Calton, Brook A., Chang, Shih Chen, Wright, Margaret E., Kipnis, Victor, Lawson, Karla, Thompson, Frances E., Subar, Amy F., Mouw, Traci, Campbell, David S., Hurwitz, Paul, Hollenbeck, Albert, Schatzkin, Arthur, Leitzmann, Michael F.
Publikováno v:
Cancer Causes & Control, 2007 Jun 01. 18(5), 493-503.
Externí odkaz:
https://www.jstor.org/stable/29736649
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
Device stacking in the PCM RF switch technology is demonstrated for the first time to significantly improve OFF-state voltage and power handling capability. Due to the extremely low C OFF of the unit device, traditional device stacking is both limite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8047bfd2be635444ae2824e099147bc2
https://doi.org/10.1109/ims19712.2021.9574954
https://doi.org/10.1109/ims19712.2021.9574954
Publikováno v:
2021 IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Using a multiple gated transistor core (MGTR) with different channel lengths, a 5.4GHz LNA in 130nm SOI CMOS is demonstrated. Using a 1V supply and consuming 3mA current, LNA has 10.8dB gain, 0.65dB NF, 6dBm IIP3. The LNA is matched at input and outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f4d35fd553d9afd644f1725b5becdf
https://doi.org/10.1109/sirf51851.2021.9383421
https://doi.org/10.1109/sirf51851.2021.9383421
Akademický článek
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Akademický článek
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Autor:
Kurt A. Moen, Hurwitz Paul D
Publikováno v:
2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
A novel RF switch branch design and layout is proposed to reduce on-state second harmonic nonlinearity. We have demonstrated a 2.5X reduction in the second harmonic power in RF-SOI and SiGe BiCMOS bulk technologies that serve the wireless front-end m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e68138c07bfd400fbaea2bfd909ed3
https://doi.org/10.1109/sirf.2018.8304214
https://doi.org/10.1109/sirf.2018.8304214
Akademický článek
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Publikováno v:
2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).
Improvements in foundry RF and mm-wave Si offerings over the last several years have allowed it to take market share from III-V processes for TX / RX applications. The increased RF switch content in handsets is now dominated by RF-SOI which also supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fea8d84cdf22b2a0fc236aa01ebd782b
https://doi.org/10.1109/sirf.2016.7445453
https://doi.org/10.1109/sirf.2016.7445453
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
The requirements for silicon foundry technology serving the RF / mixed signal and high performance analog (HPA) market are very different from those intended for mostly digital designs. RF / HPA applications require a rich set of features in a modula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cc0a708bbbe9265df04ef07fc4da547
https://doi.org/10.1109/vlsi-tsa.2014.6839697
https://doi.org/10.1109/vlsi-tsa.2014.6839697