Zobrazeno 1 - 10
of 231
pro vyhledávání: '"Hurm, V."'
Publikováno v:
Journal of Applied Physics; 11/1/1986, Vol. 60 Issue 9, p3214, 10p
Publikováno v:
Journal of Applied Physics; 7/1/1985, Vol. 58 Issue 1, p588, 10p, 1 Diagram, 1 Chart, 8 Graphs
Autor:
Tessmann, A., Hurm, V., Leuther, A., Massler, H., Weber, R., Kuri, M., Riessle, M., Stulz, H.-P., Zink, M., Schlechtweg, M., Ambacher, O., Närhi, T.
Two compact H-band (220-325 GHz) low-noise amplifier MMICs have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::d8659591101e24353ad03fe630f89e90
https://publica.fraunhofer.de/handle/publica/236183
https://publica.fraunhofer.de/handle/publica/236183
Autor:
Ke, W., Jie, L., Djupsjöbacka, A., Chacinski, M., Westergren, U., Popov, S., Jacobsen, G., Hurm, V., Makon, R.E., Driad, R., Walcher, H., Rosenzweig, J., Steffan, A.G., Mekonnen, G.G., Bach, H.-G., Zhuo, L., Friberg, A.
Traditional intensity modulated two-level electrical time-division multiplexing (ETDM) transmission systems working at 100 - 112 Gbit/s were investigated. The complete ETDM systems based on monolithically integrated transmitter and receiver modules w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::2a79f3f18d98609544ff07e61d84c99e
https://publica.fraunhofer.de/handle/publica/226083
https://publica.fraunhofer.de/handle/publica/226083
Autor:
Tessmann, A., Kallfass, I., Leuther, A., Kuri, M., Riessle, M., Massler, H., Sommer, R., Wahlen, A., Essen, H., Hurm, V., Schlechtweg, M., Ambacher, O.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::371fdbc32bf16193f8c836085ad67b45
https://publica.fraunhofer.de/handle/publica/217559
https://publica.fraunhofer.de/handle/publica/217559
Autor:
Hurm, V., Bronner, W., Benz, W., Köhler, K., Kropp, J.-R., Lösch, R., Ludwig, M., Mann, G., Mikulla, M., Rosenzweig, J., Schlechtweg, M., Walther, M., Weimann, G.
At 1 x 12 metal-semiconductor-metal (MSM) photodiode array operating at 10 Gbit/s per channel was developed for short-haul 0.85 µm wavelength parallel optical links. The GaAs-based MSM photodiodes with a diameter of 80 µm have a responsivity of 0.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::afdeea650618bac2e40cc26081ae6be2
https://publica.fraunhofer.de/handle/publica/201926
https://publica.fraunhofer.de/handle/publica/201926
Autor:
Leich, M., Hurm, V., Sohn, J., Feltgen, T., Bronner, W., Köhler, K., Walcher, H., Rosenzweig, J., Schlechtweg, M.
Hybrid integrated photoreceivers with up to 65 GHz bandwidth are presented. They consist of GalnAs/AlGalnAs/AlInAs multimode waveguide photodiodes, flip-chip bonded on GaAs-based pseudomorphic HEMT distributed amplifiers with a very low input impedan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::900507304cea12e548e9873d80df66e5
https://publica.fraunhofer.de/handle/publica/202133
https://publica.fraunhofer.de/handle/publica/202133
Autor:
Huber, A., Huber, D., Morf, T., Jäckel, H., Bergamaschi, C., Hurm, V., Ludwig, M., Schlechtweg, M.
A monolithically integrated, lumped 4OGbit/s photoreceiver consisting of an InGaAs pin-photodetector, an InP/InGaAs SHBT transimpedance and a differential post-amplifier is presented. The complete circuit has an optical/electrical bandwidth of 28GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::c5efccc4753c1b25aa059567dd94ad60
https://publica.fraunhofer.de/handle/publica/194788
https://publica.fraunhofer.de/handle/publica/194788
Autor:
Lao, Z., Thiede, A., Nowotny, U., Lienhart, H., Hurm, V., Schlechtweg, M., Hornung, J., Bronner, W., Köhler, K., Hülsmann, A., Raynor, B., Jakobus, T.
A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was manufactured in a 0.2- mu m gate length AlGaAs/InGaAs high electron mobility transistor technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::5aa341c723e7690b96f6e4d28dedf1b9
https://publica.fraunhofer.de/handle/publica/192020
https://publica.fraunhofer.de/handle/publica/192020
Autor:
Lao, Z., Hurm, V., Bronner, W., Hülsmann, A., Jakobus, T., Köhler, K., Ludwig, M., Raynor, B., Rosenzweig, J., Schlechtweg, M., Thiede, A.
A fully monolithically integrated photoreceiver composed of a metal-semiconductor-metal (MSM) photodetector, a transimpedance amplifier and three limiting amplifier stages for high-speed optical-fiber links is presented. The IC was fabricated using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::9883ae2b0d239696ef324fa3db7c4a88
https://publica.fraunhofer.de/handle/publica/192018
https://publica.fraunhofer.de/handle/publica/192018