Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Huolin Huang"'
Autor:
Fanyi Kong, Chenhua Ji, Gaolei Zhao, Lei Zhang, Zheng Hao, Hu Wang, Jianxun Dai, Huolin Huang, Lujun Pan, Dawei Li
Publikováno v:
Nanomaterials, Vol 14, Iss 19, p 1597 (2024)
As an important trace molecular detection technique, surface-enhanced Raman scattering (SERS) has been extensively investigated, while the realization of simple, low-cost, and controllable fabrication of wafer-scale, flexible SERS-active substrates r
Externí odkaz:
https://doaj.org/article/ea423c689c7f47afb5f1a27a4726e61c
Publikováno v:
Micromachines, Vol 9, Iss 12, p 658 (2018)
Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model
Externí odkaz:
https://doaj.org/article/3393d3d7ccfc49f99b141a9dcf4e34aa
Autor:
Lei Zhang, Kun Liu, Fanyi Kong, Xue Han, Jianxun Dai, Mengmeng Wang, Changsen Sun, Huolin Huang, Lujun Pan, Dawei Li
Publikováno v:
ACS Applied Nano Materials. 6:5972-5979
Autor:
Kaiming Ma, Huolin Huang, Nannan Ding, Nan Sun, Jianxun Dai, Zhonghao Sun, Hui Zhang, Pengcheng Tao, Yanhong Liu, Kairong Qin, Yung C. Liang
Publikováno v:
IEEE Transactions on Electron Devices. 69:7019-7024
Autor:
Nan Sun, Huolin Huang, Zhonghao Sun, Ronghua Wang, Shuxing Li, Pengcheng Tao, Yongshuo Ren, Shukuan Song, Hongzhou Wang, Shaoquan Li, Wanxi Cheng, Huinan Liang
Publikováno v:
IEEE Transactions on Electron Devices. 69:82-87
Autor:
Z. Liang, Cheng Zhao, Nan Sun, Wang Ronghua, Feiyu Li, Pengcheng Tao, Huolin Huang, G. Ren, Ren Yongshuo, Liang Huinan, Zhonghao Sun
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 9:6424-6431
This article proposed a hard switching high-temperature reverse bias (HS-HTRB) stress test method with a high measurement delay tolerance to study the impacts and mechanisms of hot electron effects on the stability of threshold voltage ( $V_{\mathrm
Autor:
YiAn Yin, Kun Liu, Yanhong Liu, Nan Sun, Huolin Huang, Yung C. Liang, Pengcheng Tao, Zhonghao Sun, Kai-Rong Qin
Publikováno v:
IEEE Transactions on Electron Devices. 68:299-306
Designing a reasonable electrode size and obtaining precise contact resistance parameters are always crucial in the field of chip manufacturing, especially in the cases of tiny chips with very low contact resistance. In this work, an improved analyti
Autor:
Zhengyun Wu, Yi Li, Huolin Huang, Xiaping Chen, Weifeng Yang, Rongdun Hong, Yannan Xie, Qinghao Xu, Xingyu Shi
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 15:389-393
The electrical properties of Ti/Au contacts to anatase TiO2 nanocrystal films are investigated under different thermal annealing temperature (300–500 °C) in a N2 ambient. The as-deposited contact shows a non-linear current–voltage (I – V) prop
Autor:
Liang Huinan, Huolin Huang, Nan Sun, Gao Jun, Pengcheng Tao, Ren Yongshuo, Wang Ronghua, Zhonghao Sun, Shaoquan Li, Hongzhou Wang, Cheng Wanxi, Song Shukuan
Publikováno v:
IEEE Electron Device Letters. 41:135-138
Enhancement-mode (E-mode) GaN-based MIS-HEMTs still suffer from undeniable gate leakage or low gate breakdown voltage due to the low quality of gate dielectrics, resulting in a notorious tailing effect of the off-state current. In this letter, a gate
Publikováno v:
Journal of Physics D: Applied Physics. 55:425108
Memristor has been an important synaptic device for neuromorphological calculation, but its general model has not been established even though several mechanisms have been accepted widely. Fundamentally, the diversity of mechanisms lies in a wide ran