Zobrazeno 1 - 10 of 43 pro vyhledávání: '"Hunsoo JEON"'
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Comparison of AIN Nanowire-Like Structures Grown by using Mixed-Source Hydride Vapor Phase Epitaxy Method
Autor: Chae-Ryong Cho, Hunsoo Jeon, Kyoung Hwa Kim, Injun Jeon, Min Yang, Sam Nyung Yi, Suck-Whan Kim, Hyung Soo Ahn, Gang Seok Lee
Publikováno v: Journal of the Korean Physical Society. 75:242-247
Four AlN nanowire-like structures were simultaneously grown directly without a buffer layer on four substrates-sapphire, quartz, Si(111), and 6H-SiC-via a mixed-source hydride vapor phase epitaxy (HVPE) method using a mixed source (Al+Ga) containing
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::517f98472d77cbc1ca15e9c0fff52d9b
https://doi.org/10.3938/jkps.75.242
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4
Growth of AlN Epilayers on Sapphire Substrates by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method
Autor: Injun Jeon, Min Yang, Chae-Ryong Cho, Hunsoo Jeon, Kyoung Hwa Kim, Suck-Whan Kim, Gang Seok Lee, Hyung Soo Ahn, Sam Nyung Yi
Publikováno v: Journal of the Korean Physical Society. 74:1160-1165
AIN epilayers of different thicknesses were grown directly on sapphire substrates without a buffer layer by using a mixed (Al+Ga) source containing 95 at% Al and a mixed-source hydride vapor phase epitaxy (HVPE) method at a temperature of around 1120
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2dda982396601d65635c05d4170a561c
https://doi.org/10.3938/jkps.74.1160
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5
Electrode-Evaporation Method of III-nitride Vertical-type Single Chip LEDs
Autor: Hunsoo Jeon, Chae-Ryong Cho, Kyoung Hwa Kim, Hyung Soo Ahn, Injun Jeon, Min Yang, Suck-Whan Kim, Sam Nyung Yi
Publikováno v: Journal of the Korean Physical Society. 73:1346-1350
An electrode-evaporation technology on both the top and bottom sides of the bare vertical-type single chip separated from the traditional substrate by cooling, was developed for III-nitride vertical-type single chip LEDs with thick GaN epilayer. The
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6ff12172fc6fc9c11a18d4b7b5def98
https://doi.org/10.3938/jkps.73.1346
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10
Effects of P3HT concentration on the electrical properties of the Au/PEDOT:PSS/P3HT/n-GaN hybrid junction structure
Autor: Kyung-Won Lim, Ji-Yeon Noh, Ha Young Lee, Hunsoo Jeon, Dong Han Ha, Young Moon Yu, Hyung Soo Ahn, Min Jeong Shin, Sam Nyung Yi
Publikováno v: Journal of the Korean Physical Society. 71:349-354
An inorganic-organic hybrid junction has been fabricated by spin coating the p-type poly(3- hexylthiophene-2,5-diyl)(P3HT) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) on an n-type GaN layer. The GaN layer was formed on Al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31c21bb490e4893bf9343f292831218f
https://doi.org/10.3938/jkps.71.349
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