Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hung-Yueh Liao"'
Autor:
Chia Chien Lee, Manish Khanna, Ling-Chieh Lin, Yen Po Tseng, Chun-Sheng Tsai, Alex Pearson, Hung-Yueh Liao, Shou-Yuan Ma, Hsi Min Liu, Xiang Fang
Publikováno v:
Photomask Japan 2021: XXVII Symposium on Photomask and Next-Generation Lithography Mask Technology.
Autor:
I. Y. Chang, Xiang Fang, Elven Huang, Hung-Yueh Liao, Chuan-Chun Lee, Ling-Chieh Lin, Chien-Nan Lin, Min-Ying Lu, Hsu-Tang Liu, Chuen-Huei Yang, Erwin Deng, Shou-Yuan Ma, Ming-Feng Shen, Jonathan Muirhead
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
In this paper we combined the hotspot pattern library and the rule-based scoring system into a modularized hotspot-checking rule deck running on an automatic flow. Several DFM (design for manufacture) properties criteria will be defined to build a
Autor:
Gordon Russell, Min-Ying Lu, Rachel Lee, Jenny Tsai, Erwin Deng, Amanda Bowhill, Ling-Chieh Lin, Hien T. Vu, Hung-Yueh Liao, Jian-Cheng Chen, Chuen-Huei Yang, Joe Tsai, Shou-Yuan Ma, Ming-Feng Shen, Xiang Fang
Publikováno v:
SPIE Proceedings.
The Mask Data Correctness Check (MDCC) is a reticle-level, multi-layer DRC-like check evolved from mask rule check (MRC). The MDCC uses extended job deck (EJB) to achieve mask composition and to perform a detailed check for positioning and integrity
Autor:
Jenny Tsai, Erwin Deng, Roger Lin, Shou-Yuan Ma, Amanda Bowhill, Chuen-Huei Yang, Gordon Russell, Alice Wang, Ling-Chieh Lin, Hung-Yueh Liao, Hien T. Vu, Joe Tsai, Rachel Lee
Publikováno v:
SPIE Proceedings.
The mask composition checking flow is an evolution of the traditional mask rule check (MRC). In order to differentiate the flow from MRC, we call it Mask Data Correctness Check (MDCC). The mask house does MRC only to identify process limitations incl
Autor:
Xiang Fang, Shou-Yuan Ma, Chien-Nan Lin, Hsu-Tang Liu, Chuan-Chun Lee, Chuen-Huei Yang, I-Y Chang, Erwin Deng, Ming-Feng Shen, Min-Ying Lu, Ling-Chieh Lin, Hung-Yueh Liao, Huang, Elven, Muirhead, Jonathan
Publikováno v:
Proceedings of SPIE; 8/23/2018, Vol. 10807, p1-5, 5p
Publikováno v:
SPIE Proceedings.
Model-based optical proximity correction (OPC) is an indispensable production tool enabling successful extension of photolithography down to sub-80nm regime. Commercial OPC software has established clear procedures to produce accurate OPC models at b