Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Hung-Tse Chen"'
Autor:
Hung-Tse Chen, 陳宏澤
103
In this paper, a reliability calculation program is developed by using Boolean algebra method for the purpose of solving reliabilities of data centers. This method can evaluate the reliabilities of simple systems by hand computation and comp
In this paper, a reliability calculation program is developed by using Boolean algebra method for the purpose of solving reliabilities of data centers. This method can evaluate the reliabilities of simple systems by hand computation and comp
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/nbcny4
Autor:
Hung-Tse Chen, 陳宏澤
102
Nowadays, there are two most used treatments for the acute patients, Drugs and Surgery. An ischemic stroke patients can go through thrombolysis and hemicraniectomy, and a intracerebral hemorrhage stroke can use surgery to relieve the brain p
Nowadays, there are two most used treatments for the acute patients, Drugs and Surgery. An ischemic stroke patients can go through thrombolysis and hemicraniectomy, and a intracerebral hemorrhage stroke can use surgery to relieve the brain p
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40962771963377817539
Autor:
Hung-Tse Chen, 陳宏澤
94
Financial distress results from a mismatch between the available liquid assets of a company and its interest expenditure generated by debt. Mechanisms for dealing with financial distress rectify the mismatch by either restructuring the liquid
Financial distress results from a mismatch between the available liquid assets of a company and its interest expenditure generated by debt. Mechanisms for dealing with financial distress rectify the mismatch by either restructuring the liquid
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/40102412863243803080
Autor:
Hung-Tse Chen, 陳宏澤
91
We have used scanning probe measurements to establish a novel technique for studying the physical properties of micro-scale surface defects. By using the scanning Kelvin measurement, we can directly obtain bare surface barrier height and henc
We have used scanning probe measurements to establish a novel technique for studying the physical properties of micro-scale surface defects. By using the scanning Kelvin measurement, we can directly obtain bare surface barrier height and henc
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/19012134547096912184
Publikováno v:
physica status solidi c. 11:957-960
Ti/Al/Pt/Au and Ti/Au ohmic contact materials on the N-face surface of oxygen doped GaN (GaN:O) were investigated by measuring the specific contact resistivity (ρc) with respect to annealing temperature. Ti/Au contact showed good ohmic property in c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4328f3778d8dbef3eb1db72540a50a2
https://doi.org/10.1002/pssc.201300469
https://doi.org/10.1002/pssc.201300469
Publikováno v:
Japanese Journal of Applied Physics. 45:3154-3158
In this work, low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with sequential lateral solidification (SLS) laser annealing process were fabricated. The grain boundaries (GB) can be well-controlled to avoid the channel area
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0621e987335bb2866e9b2ff392e76ce
https://doi.org/10.1143/jjap.45.3154
https://doi.org/10.1143/jjap.45.3154
Publikováno v:
IEEE Electron Device Letters. 28:499-501
A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::726704c16ac56dffb71017662d6e4313
https://doi.org/10.1109/led.2007.896894
https://doi.org/10.1109/led.2007.896894
Publikováno v:
IEEE Electron Device Letters. 27:272-274
A metal-oxide-nitride-oxide-polysilicon (MONOS) memory device fabricated by sequential lateral solidified (SLS) low-temperature polycrystalline silicon (poly-Si) technology on a glass substrate was investigated. The Si protrusions at grain boundaries
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c73ba2ca7d7185090508f90614ce80
https://doi.org/10.1109/led.2006.871538
https://doi.org/10.1109/led.2006.871538
Autor:
Claude Weisbuch, Elizabeth Rangel, Elison Matioli, Hung-Tse Chen, James S. Speck, Evelyn L. Hu
Publikováno v:
Scopus-Elsevier
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37d18e11e74329ac255b8328bb5f51ad
https://doi.org/10.1364/cleo_si.2011.cma3
https://doi.org/10.1364/cleo_si.2011.cma3
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
Sequential lateral solidification (SLS) technology developed for crystallizing amorphous Si enlarges grain size effectively. However, thin-film transistors made by SLS suffer reliability issues possibly due to the innate sub-grain boundaries parallel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8677ad13101c5e78a5ac1b8159218c03
https://doi.org/10.1109/relphy.2007.369568
https://doi.org/10.1109/relphy.2007.369568