Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hung-Ting Chou"'
Autor:
Hung-Ting Chou, 周泓廷
101
This thesis is primarily targeted to design and implement the key component, mixer, for V-band radio frequency (RF) transceiver front-end using source-driven technology. There are two source-driven mixers are investigated based on 90-nm CMOS
This thesis is primarily targeted to design and implement the key component, mixer, for V-band radio frequency (RF) transceiver front-end using source-driven technology. There are two source-driven mixers are investigated based on 90-nm CMOS
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39503601381114070518
Autor:
Hung-Ting Chou, 周泓廷
97
There are three down-conversion mixers which are designed in this thesis based on the TSMC 0.18μm CMOS process for wireless communication system. They include both single balanced mixer structure and double balanced mixer structure. The main
There are three down-conversion mixers which are designed in this thesis based on the TSMC 0.18μm CMOS process for wireless communication system. They include both single balanced mixer structure and double balanced mixer structure. The main
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/91033882748976409247
Autor:
Yu-Lin Chen, Wen-Kuan Yeh, Heng-Tung Hsu, Ke-Horng Chen, Wen-Chin Lin, Tien-Han Yu, Hung-Ting Chou, D Godwin Raj, D Godfrey
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035007
Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt
Autor:
Yu-Lin Chen, Wen-Kuan Yeh, Ke-Horng Chen, Heng-Tung Hsu, Chin-Tsai Hsu, D Godwin Raj, Hung-Ting Chou, Jui-Sheng Wu, Tien-Han Yu, D Godfrey
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:035001
Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top
Autor:
Tzu-Ping Huang, Ming-Hsien Lin, You-Zheng Ou-Yang, Ke-Horng Chen, Ying-Hsi Lin, Yen-An Lin, Zheng-Ru Wu, Hung-Ting Chou
Publikováno v:
VLSI Circuits
The right-half-plane (RHP) zero can be eliminated in the proposed buck-boost (BB) converter to achieve fast transients for Internet-of-Thing (IoT) applications. The pseudo-boost mode in the BB converter eliminates one power switch in the current path
Publikováno v:
Microwave and Optical Technology Letters. 57:1752-1755
A modified fT-doubler with current-reused technique is proposed to realize a low power and low phase noise V-band voltage controlled oscillator (VCO) in a standard 1P9M 90-nm CMOS. The proposed technique not only increases the operation frequency but
Autor:
Hwann-Kaeo Chiou, Hung-Ting Chou
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 61:2620-2631
This paper proposes a microwatt source-driven down-conversion mixer with broadband asymmetrical broadside-coupled baluns in a 90-nm CMOS low-power process. The forward body biased (FBB) technique reduces the threshold voltage (VTH) and supply voltage
Publikováno v:
IEEE Microwave and Wireless Components Letters. 23:548-550
This letter proposes a broadband and low-loss multiconductor-lines signal combiner in 90 nm CMOS. The signal combiner consists of one broadside-coupled balun, two broadband in-phase power dividers, one edge-coupled balun, and four impedance-transform
Autor:
Hung-Ting Chou, Hwann-Kaeo Chiou
Publikováno v:
IEEE Microwave and Wireless Components Letters. 23:40-42
This letter proposes a novel up-conversion mixer with pseudo-differential and current-reused topology in 90 nm CMOS technology. The proposed source-pumped up-conversion mixer can operate at near weak inversion under a power consumption of 149 μW fro
Publikováno v:
2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
A novel wideband dual-feedback low noise amplifier (LNA) implemented in standard 0.18 μm CMOS process is proposed in this paper. The proposed dual feedback topology can improve the total noise contribution for LNA design. By exploiting the gate-indu