Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hung-Kwei Liao"'
Autor:
Hung-Kwei Liao, Shen-Kan Hsiung, Tai-Ping Sun, Wen-Yaw Chung, Jung-Chuan Chou, Yuan-Lung Chin
Publikováno v:
Sensors and Actuators B: Chemical. 75:36-42
In this paper, we present a method allowing industrial production of integrated ion sensitive field effect transistor (ISFET) sensor. An ASIC CMOS standard process is used to integrate the sensor and signal processing circuit; then the sensor is plat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a755f3cb06b50c3742088610d687429b
https://doi.org/10.1016/s0925-4005(00)00739-5
https://doi.org/10.1016/s0925-4005(00)00739-5
Publikováno v:
Sensors and Actuators B: Chemical. 61:1-5
It is known that light sensitivity in ion sensitive field effect transistors (ISFETs) during illumination is due to carrier generation in the silicon substrate. In order to improve this drawback, multi-structure ISFETs: tin oxide/Al/insulator/Si ISFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c68c8bbb5805a13cd8f78ded3b27125a
https://doi.org/10.1016/s0925-4005(99)00036-2
https://doi.org/10.1016/s0925-4005(99)00036-2
Publikováno v:
Materials Chemistry and Physics. 59:6-11
In this study, capacitance–voltage (C–V) and current–voltage (I–V) measurements were used to investigate pHpzc (point zero of charge) and surface potential of a tin oxide gate ISFET. Dual FETs configuration: Al/SnO2/Si3N4/SiO2 gate MOSFET and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c20fd600d2d0ff40fa3daa2c3aa9ea0
https://doi.org/10.1016/s0254-0584(99)00033-4
https://doi.org/10.1016/s0254-0584(99)00033-4
Publikováno v:
IEEE Transactions on Electron Devices. 46:2278-2281
The influence of temperature and optical effects on ISFET performance are important. In this study, the temperature characteristics of the SnO/sub 2//Si/sub 3/N/sub 4//SiO/sub 2//Si ISFET are investigated by the zero temperature coefficient (T.C.) ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acc72a2a7788379f3008911af11cf300
https://doi.org/10.1109/16.808051
https://doi.org/10.1109/16.808051
Publikováno v:
Sensors and Actuators B: Chemical. 50:104-109
In this study, an amorphous tin oxide (SnO 2 ) obtained by thermal evaporation was used as a pH-sensitive material for pH-ISFETs. Capacitance–voltage (C–V) curves of the EIS diode were used to evaluate pH response of SnO 2 thin film. Subsequently
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0fb1af8509c3f8bf2ec72c1478231f9
https://doi.org/10.1016/s0925-4005(98)00162-2
https://doi.org/10.1016/s0925-4005(98)00162-2
Publikováno v:
Sensors and Actuators B: Chemical. 65:23-25
The aim of this paper is to investigate pH sensitivity of tin oxide thin films prepared by thermal evaporation, and the influences of isothermal annealing on its characteristics. A series of capacitance–voltage (C–V) curves of SnO2/SiO2/Si electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51552153a3d3f23c3c8f8c635bfc0ed8
https://doi.org/10.1016/s0925-4005(99)00444-x
https://doi.org/10.1016/s0925-4005(99)00444-x