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pro vyhledávání: '"Hung-Jui Yang"'
Autor:
HUNG,JUI-YANG, 洪瑞陽
99
With the rapid development in recent years, semiconductor devices MOS transistor scaling down due to device size ratio of both miniature and follow the specifications, so the gate oxide thickness will inevitably have to reduce as the channel
With the rapid development in recent years, semiconductor devices MOS transistor scaling down due to device size ratio of both miniature and follow the specifications, so the gate oxide thickness will inevitably have to reduce as the channel
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00126277303607847109
