Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hung-Che Liu"'
Publikováno v:
Materials, Vol 15, Iss 3, p 937 (2022)
Copper-to-copper (Cu-to-Cu) direct bonding is a promising approach to replace traditional solder joints in three-dimensional integrated circuits (3D ICs) packaging. It has been commonly conducted at a temperature over 300 °C, which is detrimental to
Externí odkaz:
https://doaj.org/article/8efdb573f61047f2bdfd63998bd84211
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution
Autor:
Kang-Ping Lee, Dinh-Phuc Tran, Fu-Chian Chen, Wei-You Hsu, Yi-Quan Lin, Hung-Che Liu, Chih Chen
Publikováno v:
Materials Letters. 313:131775
Publikováno v:
Materials Characterization. 181:111459
Cu-to-Cu direct bonding technology has been adopted to achieve ultra-high- density interconnects for 3D IC integration. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due
Autor:
Chuan-Yu Fang, Dinh-Phuc Tran, Hung-Che Liu, Jia-Juen Ong, Yi-Quan Lin, Wei-You Hsu, Chih Chen
Publikováno v:
Journal of The Electrochemical Society; Apr2022, Vol. 169 Issue 4, p365-370, 6p