Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Hung Der Su"'
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea25813c05b930b394aca43103915b71
https://doi.org/10.1109/ipfa53173.2021.9617451
https://doi.org/10.1109/ipfa53173.2021.9617451
Autor:
Jeng Gong, Chih-Fang Huang, Wu-Te Weng, Hung-Der Su, Tsung-Yi Huang, Kuo-Hsuan Lo, Chien-Hao Huang
Publikováno v:
IEEE Transactions on Electron Devices. :1-5
A novel transient voltage suppressor (TVS) that features ultralow capacitance is proposed. This structure is able to reduce the input capacitance by 21.1%, and is designed to protect against electrostatic discharge (ESD) issues for high-speed ports.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c1a7ad5968ba69e2a4b258e51501709
https://doi.org/10.1109/ted.2016.2582320
https://doi.org/10.1109/ted.2016.2582320
Publikováno v:
Solid-State Electronics. 104:12-19
In this paper, a scheme for how to utilize VFTLP (very fast transmission line pulse) data to design an input buffer circuit for CDM (charged-device model) ESD protection is reported. The impedance of the ESD device under VFTLP stress is nearly 120 Ω
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7d7cfa27e0318193b5fb872144836ec
https://doi.org/10.1016/j.sse.2014.11.004
https://doi.org/10.1016/j.sse.2014.11.004
Publikováno v:
IEEE Transactions on Electron Devices. 58:1914-1921
In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa009e8f88d2635244bd7e2d64c53602
https://doi.org/10.1109/ted.2011.2143717
https://doi.org/10.1109/ted.2011.2143717
Autor:
Tzu-Cheng Kao, Chung-Yu Hung, Jian-Hsing Lee, Hung-Der Su, Chih-Fang Haung, Jeng Gong, Kuo-Hsuan Lo
Publikováno v:
IEEE Electron Device Letters. 35:1052-1054
The high-voltage (H-V) junction barrier Schottky (JBS) diode is often incorporated into the input or output of H-V integrated circuits. When the chip is connected to the external environment, it inevitably suffers electrostatic discharge (ESD) stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd0b75e1fdf687d59b90ecbb7957470c
https://doi.org/10.1109/led.2014.2350020
https://doi.org/10.1109/led.2014.2350020
Autor:
Kuo-Hsuan Lo, Jian-Hsing Lee, Hung-Der Su, Wu-Te Weng, Chung-Yu Hung, Chien-Wei Chiu, Chenhsin Lien, Tzu-Cheng Kao
Publikováno v:
Electronics Letters. 50:667-669
The influence of the body layout on the charged device model (CDM) failure site and the robustness of the input buffer is explored. The failure analysis results confirm that the gate oxide is damaged. The failure site can be moved from the region abo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f0a1d149d355ce93c204007e35c9c70
https://doi.org/10.1049/el.2013.4094
https://doi.org/10.1049/el.2013.4094
Autor:
Jeng Gong, Hung-Der Su, Chih-Fang Huang, Jian-Hsing Lee, Chung-Yu Hung, Tzu-Cheng Kao, Kuo-Hsuan Lo, Tsung-Yi Huang, Kuo-Cheng Chang
Publikováno v:
Electronics Letters. 50:200-202
A simple scheme is proposed to increase the hold voltage and not change the original trigger voltage of a silicon-controlled rectifier (SCR) to enhance its latch-up immunity without changing the device dimensions. It is found that using the lightly d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d2686dfac598fb18d4322286529bbe
https://doi.org/10.1049/el.2013.1853
https://doi.org/10.1049/el.2013.1853
Autor:
Chien-Wei Chiu, Tsung-Yi Huang, Jeng Gong, Chien-Hao Huang, Huang-Ping Chu, Chih-Fang Huang, Jing-Meng Liu, Hung-Der Su, Wang-Chi Vincent Yeh, Ching-Yao Yang, Kuo-Hsuan Lo
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Conventional BCD and high voltage technologies are developed with extra masks and additional thermal drive-in process units included in existing LV platforms. The technology development is time-consuming and the turnaround time for the whole process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa28743ccb88e55eefa3ef6d6d104ab
https://doi.org/10.1109/ispsd.2015.7123422
https://doi.org/10.1109/ispsd.2015.7123422
Publikováno v:
IRPS
From the experimental measurements, the dominant charge source for a packaged IC chip during a charged-device model (CDM) ESD event is the capacitor between the die-attach plate and the metal bus line, C SUB . By adding a bonding wire between the die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::513a632f5d7b710f6a7a8b63a0e034a1
https://doi.org/10.1109/irps.2015.7112797
https://doi.org/10.1109/irps.2015.7112797
Autor:
Chung-Yu Hung, Chien-Wei Chiu, Chen-Hsin Lien, Jian-Hsing Lee, Tsung-Yi Huang, Hung-Der Su, Tzu-Cheng Kao, Yen-Hsiang Lo
Publikováno v:
IRPS
A new enhanced displacement-current triggering by adding floating P+ diffusions at each source finger edge for the HV LDNMOSFET is proposed. Unlike the conventional substrate-triggered ESD protection technologies, it is very easy to implement the sch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88effc829ebc3b1baca10f93478574e6
https://doi.org/10.1109/irps.2015.7112796
https://doi.org/10.1109/irps.2015.7112796