Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hung Chan Lin"'
Autor:
Shao Hui Wu, Hiroki Inoue, Xiao Yu Jia, Shunpei Yamazaki, Hung-Chan Lin, Takeshi Aoki, Takayuki Ikeda, Yuki Okamoto, Harada Shintaro, Makoto Ikeda, Yoshiyuki Kurokawa, Tai-Chi Kao, Munehiro Kozuma
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1412-1415
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05dc1ee92fe4413c703c4d3d65e0af5a
https://doi.org/10.1002/sdtp.11898
https://doi.org/10.1002/sdtp.11898
Autor:
Hitoshi Kunitake, Hai Biao Yao, Munehiro Kozuma, Takayuki Ikeda, Shunpei Yamazaki, Takashi Nakagawa, Shao Hui Wu, Fumika Akasawa, Chi Chang Shuai, Makoto Ikeda, Seiichi Yoneda, Hiroki Inoue, Harada Shintaro, Yoshiyuki Kurokawa, Takeshi Aoki, Hung Chan Lin, Yuki Okamoto
Publikováno v:
SID Symposium Digest of Technical Papers. 48:197-200
An oxide semiconductor (OS) display system built with normally-off devices, nonvolatile OS LSI and an OS display, is proposed. The power consumption of the system is reduced by the nonvolatile OS LSI performing power gating without vanishing setting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57defc9a2256dff0a9938df33b44180c
https://doi.org/10.1002/sdtp.11627
https://doi.org/10.1002/sdtp.11627
Autor:
Shunpei Yamazaki, Takahiko Ishizu, Yoshinori Ando, Hai Biao Yao, Chi Chang Shuai, Daisuke Matsubayashi, Atsuo Isobe, Kiyoshi Kato, Momoyo Yamaguchi, Shao Hui Wu, Shuhei Nagatsuka, Hung Chan Lin, Tatsuya Onuki
Publikováno v:
ECS Transactions. 79:149-156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bcd9e5bcf537d1547841c4462ca212f
https://doi.org/10.1149/07901.0149ecst
https://doi.org/10.1149/07901.0149ecst
Publikováno v:
2017 12th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT).
MIPI Alliance has developed C-PHY specification which with a higher rate and application level than the past version, such as the current market Camera CMOS Image sensors, Display Driver ICs, Application processor for Mobile devices; all need to use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa503174febed571786ac73cfea6f9a6
https://doi.org/10.1109/impact.2017.8255937
https://doi.org/10.1109/impact.2017.8255937
Autor:
Xiang Li, Mu Yi Liu, Chi Chang Shuai, Tzung Han Wu, J Y Wu, Shunpei Yamazaki, Shao Hui Wu, Ming Chang Lu, Kiyoshi Kato, Daisuke Matsubayashi, X Y Jia, Hung Chan Lin
Publikováno v:
2017 Symposium on VLSI Technology.
The worldwide first 100MHz dynamic oxide semiconductor RAM (DOSRAM) is successfully demonstrated using a new high-mobility crystalline In-Ga-Zn-O (IGZO) material. The new IGZO exhibits around two times carrier mobility of conventional IGZO, while sti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7482be19cd324f38ba27b7a0b88afd4d
https://doi.org/10.23919/vlsit.2017.7998144
https://doi.org/10.23919/vlsit.2017.7998144
Autor:
Momoyo Yamaguchi, Atsuo Isobe, Shunpei Yamazaki, Daisuke Matsubayashi, Hai Biao Yao, Juan-Yuan Wu, Kiyoshi Kato, Takahiko Ishizu, Shuhei Nagatsuka, Chi Chang Shuai, Hung Chan Lin, Masahiro Fujita, Yoshinori Ando
Publikováno v:
2017 Symposium on VLSI Circuits.
An embedded 1 Mbit 2T1C gain-cell memory macro using indium-gallium-zinc oxide semiconductor FETs (OSFETs) with an extremely low off-state current of less than 1 zA (10−21 A) was fabricated. In the 2T1C gain cell, an OSFET for the write operation w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13adbd2ccc9878843f331278e42dbd85
https://doi.org/10.23919/vlsic.2017.8008466
https://doi.org/10.23919/vlsic.2017.8008466
Autor:
Kiyoshi Kato, Chi Chang Shuai, Tri Rung Yew, Tien Yu Hsieh, X Y Jia, Shao Hui Wu, Juan-Yuan Wu, Mei Kui, Derek Chen, Shunpei Yamazaki, Yuta Endo, Chen Bin Lin, Hung Chan Lin
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
For the first time, laboratory 60 nm c-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) oxide semiconductor FET (OSFET) was successfully integrated with industrial 65 nm Si MOSFET (SiFET). By this hybrid process, OSFET with extremely low off-state lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ea1c4c9803e0967e8ae5f6bca14b1f
https://doi.org/10.1109/vlsit.2016.7573378
https://doi.org/10.1109/vlsit.2016.7573378
Autor:
Hung-Chan Lin, 林鴻展
99
This thesis presents a novel miniaturized broadband helical antenna for the applications in Galileo and GPS. We periodically added a section of side stubs with an angle 23.55 degrees on the each two sides of the helical strip by a distance of
This thesis presents a novel miniaturized broadband helical antenna for the applications in Galileo and GPS. We periodically added a section of side stubs with an angle 23.55 degrees on the each two sides of the helical strip by a distance of
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/86005172915324084271
