Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hunbeom Shin"'
Autor:
Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung
Publikováno v:
IEEE Journal of Solid-State Circuits. :1-11
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a3cd02e87b9ae413ce9ed95bda05c73
https://doi.org/10.1109/jssc.2023.3265667
https://doi.org/10.1109/jssc.2023.3265667
Autor:
Yeongseok Jeong, Venkateswarlu Gaddam, Youngin Goh, Hunbeom Shin, Sangho Lee, Giuk Kim, Sanghun Jeon
Publikováno v:
IEEE Transactions on Electron Devices. 70:354-359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04220de7deb6d4994ce30b76ebbfcaef
https://doi.org/10.1109/ted.2022.3223886
https://doi.org/10.1109/ted.2022.3223886
Autor:
Giuk Kim, Dong Han Ko, Taeho Kim, Sangho Lee, Minhyun Jung, Young Kyu Lee, Sehee Lim, Minyoung Jo, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, Seongook Jung, Sanghun Jeon
Publikováno v:
ACS Applied Materials & Interfaces. 15:1463-1474
Ferroelectric field-effect transistors (FeFETs) have attracted enormous attention for low-power and high-density nonvolatile memory devices in processing-in-memory (PIM). However, their small memory window (MW) and limited endurance severely degrade
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::428a7870f00f23364660704c81448bde
https://doi.org/10.1021/acsami.2c14867
https://doi.org/10.1021/acsami.2c14867
Autor:
Bohyeon Kang, Jongseo Park, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Jehyun An, Hyunseo You, Sung-Min Ahn, Sanghun Jeon, Rock-Hyun Baek
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86234e3b9b42e3cbbb3db318351bc17d
https://doi.org/10.1109/edtm55494.2023.10102929
https://doi.org/10.1109/edtm55494.2023.10102929
Autor:
Giuk Kim, Sangho Lee, Taehyong Eom, Taeho Kim, Minhyun Jung, Hunbeom Shin, Yeongseok Jeong, Myounggon Kang, Sanghun Jeon
Publikováno v:
Journal of Materials Chemistry C. 10:9802-9812
This article presents a 3D ferroelectric NAND flash memory with a wide MW, low operation voltage, fast PGM/ERS speed, and higher endurable cycles based on a HfZrO film that shows excellent ferroelectricity even at a relatively thick thickness.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::670a8c6701f99d6f77732c7d402927db
https://doi.org/10.1039/d2tc01608g
https://doi.org/10.1039/d2tc01608g
Design Guidelines of Thermally Stable Hafnia Ferroelectrics for the Fabrication of 3D Memory Devices
Autor:
Giuk Kim, Hunbeom Shin, Taehyong Eom, Minhyun Jung, Taeho Kim, Sangho Lee, Minki Kim, Yeongseok Jeong, Ji-Sung Kim, Kab-Jin Nam, Bong Jin Kuh, Sanghun Jeon
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30eba1bdf2766cb516dd7590711eb1b9
https://doi.org/10.1109/iedm45625.2022.10019458
https://doi.org/10.1109/iedm45625.2022.10019458
Autor:
Sangho Lee, Yongsun Lee, Taeho Kim, Giuk Kim, Taehyong Eom, Hunbeom Shin, Yeongseok Jeong, Sanghun Jeon
Publikováno v:
ACS applied materialsinterfaces. 14(47)
The effect of negative capacitance (NC), which can internally boost the voltage applied to a transistor, has been considered to overcome the fundamental Boltzmann limit of a transistor. To stabilize the NC effect, the dielectric (DE) must be integrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::328f42b05b4894b89b7529ce7306fd5d
https://pubmed.ncbi.nlm.nih.gov/36394287
https://pubmed.ncbi.nlm.nih.gov/36394287
A Highly Integrated Crosspoint Array Using Self-rectifying FTJ for Dual-mode Operations: CAM and PUF
Autor:
Sehee Lim, Youngin Goh, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Minki Kim, Yeongseok Jeong, Hunbeom Shin, Sanghun Jeon, Seong-Ook Jung
Publikováno v:
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75491adae09415ef0e27aeb6f067de00
https://doi.org/10.1109/esscirc55480.2022.9911355
https://doi.org/10.1109/esscirc55480.2022.9911355
Autor:
Hunbeom Shin, Venkateswarlu Gaddam, Youngin Goh, Yeongseok Jeong, Giuk Kim, Yixin Qin, Sanghun Jeon
Publikováno v:
Applied Physics Letters. 122:022901
Recently, hafnia-based ferroelectrics are currently being investigated as next-generation memory devices due to their excellent CMOS process compatibility and functionality. However, some of the ferroelectric devices commonly exhibit an imprint effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5896239ee05836873419b60eb0a608ed
https://doi.org/10.1063/5.0123312
https://doi.org/10.1063/5.0123312
Autor:
Taeho Kim, Giuk Kim, Young Kyu Lee, Dong Han Ko, Junghyeon Hwang, Sangho Lee, Hunbeom Shin, Yeongseok Jeong, Seong‐Ook Jung, Sanghun Jeon
Publikováno v:
Advanced Functional Materials. 33:2208525
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee1d9ce731afa04519b9ea008ca9a29
https://doi.org/10.1002/adfm.202208525
https://doi.org/10.1002/adfm.202208525