Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Hun-Hee Noh"'
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
The influence of silicon nitride (SiN/sub x/) passivation on the DC and low-frequency transconductance dispersion behaviours of In/sub 0.4/AIAs/In/sub 0.65/GaAs HEMTs has been investigated. Although the surface passivation using MBE grown thin InP et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf6c62718113f0bc5e4f4918c87a9b42
https://doi.org/10.1109/iciprm.2004.1442728
https://doi.org/10.1109/iciprm.2004.1442728
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..
In this paper, a novel gate technology with triple shaped gate structure has been proposed and developed in order to minimize unwanted gate fringing capacitance. Because high gate stem height was difficult to fabricate by means of conventional direct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa75336268d359725af72808a0713f2c
https://doi.org/10.1109/iciprm.2004.1442733
https://doi.org/10.1109/iciprm.2004.1442733
Autor:
Kwang-Seok Seo, Jiang Jian, Dae-Hyun Kim, Tae-Woo Kim, Feng Wei, Jaehak Lee, Du Quangang, Xie Xiaogang, Jong-In Song, Hun-Hee Noh
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
Kink phenomenon has been carefully investigated in InP-based HEMTs with a highly strained InAs channel. Although this narrow band-gap (/spl Delta/E/sub g/) InAs channel layer with high hall mobility was effective to improve device speed characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09b139672b82e1a5df4902a709320aba
https://doi.org/10.1109/iedm.2004.1419365
https://doi.org/10.1109/iedm.2004.1419365
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::682ba2e18437d1ea50657298df094f45
https://doi.org/10.7567/ssdm.2004.f-2-1
https://doi.org/10.7567/ssdm.2004.f-2-1
Publikováno v:
Japanese Journal of Applied Physics. 44:2472
In this study, 0.1 µm double-recessed T-gate GaAs pseudomorphic high electron mobility transistors (PHEMT's), in which an InGaAs layer and a Si pulse-doped layer in the cap structure are inserted, have been successfully fabricated. This cap structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c825e1cdcd198a10538e95a33734c2
https://doi.org/10.1143/jjap.44.2472
https://doi.org/10.1143/jjap.44.2472
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide & Related Materials, 2004; 2004, p374-377, 4p
Publikováno v:
16th IPRM. 2004 International Conference on Indium Phosphide & Related Materials, 2004; 2004, p354-357, 4p
Autor:
Dae-Hyun Kim, Tae-Woo Kim, Hun-Hee Noh, Jae-Hak Lee, Wei Feng, Xiaogang Xie, Quangang Du, Jiang Jian, Jong-In Song, Kwang-Seok Seo
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p1027-1030, 4p