Výsledky vyhledávání - "Humphreys, Colin J"

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PANIC: a 3D dislocation dynamics model for climb and glide in epitaxial films and heterostructures

Autor: Fu, Wai Yuen, Humphreys, Colin J., Moram, Michelle A.

This paper presents PANIC, a 3D discrete mesoscale dislocation dynamics model which includes a fully quantitative treatment of both dislocation climb and dislocation glide, including climb driven by both osmotic and mechanical stresses and climb enab

Externí odkaz: http://arxiv.org/abs/1406.0780

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Tunable optoelectronic and ferroelectric properties in Sc-based III-nitrides

Autor: Zhang, Siyuan, Holec, David, Fu, Wai Y., Humphreys, Colin J., Moram, Michelle A.

Publikováno v: J. Appl. Phys. 114, 133510 (2013)

Sc-based III-nitride alloys were studied using Density Functional Theory with special quasi-random structures and were found to retain wide band gaps which stay direct up to x = 0.125 (ScxAl1-xN) and x = 0.375 (ScxGa1-xN). Epitaxial strain stabilizat

Externí odkaz: http://arxiv.org/abs/1303.3745

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Towards predictive modelling of near-edge structures in electron energy loss spectra of AlN based ternary alloys

Autor: Holec, David, Rachbauer, Richard, Kiener, Daniel, Cherns, Peter D., Costa, Pedro M. F. J., McAleese, Clifford, Mayrhofer, Paul H., Humphreys, Colin J.

Publikováno v: Phys. Rev. B 83, 165122 (2011)

Although electron energy loss near edge structure analysis provides a tool for experimentally probing unoccupied density of states, a detailed comparison with simulations is necessary in order to understand the origin of individual peaks. This paper

Externí odkaz: http://arxiv.org/abs/1201.2842

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