Zobrazeno 1 - 10
of 688
pro vyhledávání: '"Humphreys, C. J."'
Density functional theory has been employed to study graphene on the (111), (100) and (110) surfaces of silicon (Si) substrates. There are several interesting findings. First, carbon atoms in graphene form covalent bonds with Si atoms, when placed cl
Externí odkaz:
http://arxiv.org/abs/2010.02551
Autor:
Sun, Y. W., Liu, W., Hernandez, I., Gonzalez, J., Rodriguez, F., Dunstan, D. J., Humphreys, C. J.
Publikováno v:
Phys. Rev. Lett. 123, 135501 (2019)
Previous Raman measurements on supported graphene under high pressure reported a very different shift rate of in-plane phonon frequency of graphene (16 cm$^{-1}$GPa$^{-1}$) from graphite (4.7 cm$^{-1}$GPa$^{-1}$), implying very different in-plane anh
Externí odkaz:
http://arxiv.org/abs/1902.02651
Autor:
Qadir, A., Sun, Y. W., Liu, W., Oppenheimer, P. Goldberg, Xu, Y., Humphreys, C. J., Dunstan, D. J.
Publikováno v:
Phys. Rev. B 99, 045402 (2019)
The lubricating ability of graphite largely depends on the environmental humidity, essentially the amount of water in between its layers. In general, intercalated molecules in layered materials modify their extraordinary properties by interacting wit
Externí odkaz:
http://arxiv.org/abs/1809.09515
Autor:
Kundys, D., Sutherland, D., Davies, M., Oehler, F., Griffiths, J., Dawson, P., Kappers, M. J., Humphreys, C. J., Schulz, S., Tang, F., Oliver, R. A.
Publikováno v:
Science and Technology of Advanced Materials, 17, (2016)
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14
Externí odkaz:
http://arxiv.org/abs/1612.06353
Autor:
Schulz, S., Tanner, D. P., O'Reilly, E. P., Caro, M. A., Martin, T. L., Bagot, P. A. J., Moody, M. P., Tang, F., Griffiths, J. T., Oehler, F., Kappers, M. J., Oliver, R. A., Humphreys, C. J., Sutherland, D., Davies, M. J., Dawson, P.
In this paper we present a detailed analysis of the structural, electronic, and optical properties of an $m$-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray
Externí odkaz:
http://arxiv.org/abs/1509.07099
Autor:
Watson-Parris, D., Godfrey, M. J., Dawson, P., Oliver, R. A., Galtrey, M. J., Kappers, M. J., Humphreys, C. J.
Publikováno v:
Phys. Rev. B 83, 115321 (2011)
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been calculated using numerical solutions of the effective mass Schr\"odinger equation. We have treated the distribution of indium atoms as random and found that the resu
Externí odkaz:
http://arxiv.org/abs/1006.1232