TSV and Cu-Cu direct bond wafer and package-level reliability.

Autor: Hummler, K., Sapp, B., Lloyd, J. R., Kruger, S., Olson, S., Park, S B, Murray, B., Jung, D., Cain, S., Park, A., Ferrone, D., Ali, I.

Publikováno v: 2013 IEEE 63rd Electronic Components & Technology Conference; 2013, p41-48, 8p

On the technology and ecosystem of 3D / TSV manufacturing.

Autor: Hummler, K., Smith, L., Caramto, R., Edgeworth, R., Olson, S., Pascual, D., Qureshi, J., Rudack, A., Quon, R., Arkalgud, S.

Publikováno v: Advanced Semiconductor Manufacturing Conference (ASMC), 2011 22nd Annual IEEE/SEMI; 2011, p1-6, 6p

On the retention time distribution of dual-channel vertical DRAM technologies.

Autor: Beintner, J., Li, Y., Casarotto, D., Chidambarrao, D., McStay, K., Wang, G., Hummler, K., Divakaruni, R., Bergner, W., Crabbe, E., Mueller, W., Poechmueller, P., Bronner, G.

Publikováno v: 2003 International Symposium on VLSI Technology, Systems & Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672); 2003, p243-246, 4p

AB INITIO CALCULATION OF MAGNETIC MOMENTS, HYPERFINE FIELDS, MAGNETIC ANISOTROPY AND EXCHANGE INTERACTIONS IN RARE-EARTH INTERMETALLICS.

Autor: HUMMLER, K., LIEBS, M., BEUERLE, T., FÄHNLE, M.

Publikováno v: International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics; Jan1993, Vol. 7 Issue 1-3, p710-715, 6p

On the treatment of 4p 'semi-core' states in molybdenum.

Autor: Buck, S., Hummler, K., Fähnle, M.

Publikováno v: Physica Status Solidi (B); Jun1996, Vol. 195 Issue 2, pK9-K11, 3p