Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Humberto Foronda"'
Autor:
Abdullah S. Almogbel, Christian J. Zollner, Burhan K. Saifaddin, Michael Iza, Jianfeng Wang, Yifan Yao, Michael Wang, Humberto Foronda, Igor Prozheev, Filip Tuomisto, Abdulrahman Albadri, Shuji Nakamura, Steven P. DenBaars, James S. Speck
Publikováno v:
AIP Advances, Vol 11, Iss 9, Pp 095119-095119-8 (2021)
The impact of AlGaN growth conditions on AlGaN:Si resistivity and surface morphology has been investigated using metalorganic chemical vapor deposition. Growth parameters including growth temperature, growth rate, and trimethylindium (TMI) flow have
Externí odkaz:
https://doaj.org/article/8a4633fbfbce4d6396f32cc8b4bbeca5
Autor:
Burhan K SaifAddin, Abdullah Almogbel, Christian J Zollner, Humberto Foronda, Ahmed Alyamani, Abdulrahman Albadri, Michael Iza, Shuji Nakamura, Steven P DenBaars, James S Speck
Publikováno v:
Semiconductor Science & Technology; Mar2019, Vol. 34 Issue 3, p1-1, 1p