Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Hujun Jia"'
Publikováno v:
Zhongguo dizhi zaihai yu fangzhi xuebao, Vol 32, Iss 2, Pp 60-65 (2021)
In recent years, serious geological disasters occur frequently in China.These geological disasters are with obvious concealment, high emergency, great destructive power and long disaster chain. The key task of our work in the field of geological disa
Externí odkaz:
https://doaj.org/article/193a540414aa41d5996ca9214d943f33
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1035 (2021)
An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-typ
Externí odkaz:
https://doaj.org/article/3954b39ba4824a3aaaf2dea2c0eec26a
Publikováno v:
Micromachines, Vol 12, Iss 5, p 488 (2021)
A novel 4H-SiC MESFET was presented, and its direct current (DC), alternating current (AC) characteristics and power added efficiency (PAE) were studied. The novel structure improves the saturation current (Idsat) and transconductance (gm) by adding
Externí odkaz:
https://doaj.org/article/e92099fbf58a451083d60eba8d23bb05
Autor:
Hujun Jia, Yuan Liang, Tao Li, Yibo Tong, Shunwei Zhu, Xingyu Wang, Tonghui Zeng, Yintang Yang
Publikováno v:
Micromachines, Vol 11, Iss 1, p 35 (2019)
A 4H-SiC metal semiconductor field effect transistor (MESFET) with layered doping and undoped space regions (LDUS-MESFET) is proposed and simulated by ADS and ISE-TCAD software in this paper. The structure (LDUS-MESFET) introduced layered doping unde
Externí odkaz:
https://doaj.org/article/522fb601f9ed471398f64f0491cfc11b
Autor:
Hujun Jia, Yibo Tong, Tao Li, Shunwei Zhu, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang
Publikováno v:
Micromachines, Vol 10, Iss 9, p 555 (2019)
An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of AD
Externí odkaz:
https://doaj.org/article/494a00280838495d8c43d60d2f66bf8e
Publikováno v:
Micromachines, Vol 10, Iss 7, p 479 (2019)
An improved multi-recessed double-recessed p-buffer layer 4H–SiC metal semiconductor field effect transistor (IMRD 4H-SiC MESFET) with high power added efficiency is proposed and studied by co-simulation of advanced design system (ADS) and technolo
Externí odkaz:
https://doaj.org/article/e0c5cdb63ea44269bdc2cd112764194e
Autor:
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang
Publikováno v:
Micromachines, Vol 10, Iss 7, p 444 (2019)
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided desig
Externí odkaz:
https://doaj.org/article/488f70ea118347cfa18998329d7bc2c8
Publikováno v:
Micromachines, Vol 9, Iss 11, p 573 (2018)
An improved ultrahigh upper gate 4H-SiC metal semiconductor field effect transistor (IUU-MESFET) is proposed in this paper. The structure is obtained by modifying the ultrahigh upper gate height h of the ultrahigh upper gate 4H-SiC metal semiconducto
Externí odkaz:
https://doaj.org/article/3fa3e282c41647889d9a550628e00dcc
Publikováno v:
Current Applied Physics. 49:100-108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9b85aa3dc2e80e1a6d9122072f918c0
https://doi.org/10.1016/j.cap.2023.02.017
https://doi.org/10.1016/j.cap.2023.02.017
Publikováno v:
Silicon. 15:1443-1450
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28e1ad94dc6fa81467a78b19f6e46953
https://doi.org/10.1007/s12633-022-02113-8
https://doi.org/10.1007/s12633-022-02113-8