Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Huixin Xiu"'
Publikováno v:
In Microporous and Mesoporous Materials December 2018 272:40-43
Publikováno v:
Ceramics International. 48:28006-28012
Publikováno v:
Ceramics International. 48:754-759
Thermal control coatings (TCCs) are an essential part of the thermal control systems in the spacecraft. Solar absorptance and emittance are the key performance parameters of TCCs. To develop an ultra-low solar absorption and stable inorganic TCCs for
Publikováno v:
Journal of Alloys and Compounds. 949:169831
Publikováno v:
Journal of Crystal Growth. 612:127199
Publikováno v:
IEEE Transactions on Electron Devices. 68:3901-3906
Solid-state carbon dots (CDs) are a new kind of color converting material for white light-emitting diodes (white LEDs) because of its good luminesce performance and low toxicity; however, CDs in solid state suffer from aggregation-caused quenching (A
Graphene-Dominated Hybrid Coatings with Highly Compacted Structure on Stainless Steel Bipolar Plates
Publikováno v:
ACS applied materialsinterfaces. 14(32)
Highly conductive corrosion protection coatings are necessary for metallic bipolar plates (BPs) of the proton-exchange membrane fuel cell. Graphene coatings have the potential of protecting metal substrates from corrosion without obscuring their exce
Publikováno v:
Semiconductor Science and Technology. 38:074001
The development of nanoporous gallium nitride (NP-GaN) has widened the material properties and applications in third-generation semiconductor areas. NP-GaN has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy st
Autor:
Huixin Xiu, Simon M. Fairclough, Abhiram Gundimeda, Menno J. Kappers, David J. Wallis, Rachel A. Oliver, Martin Frentrup
Publikováno v:
Journal of Applied Physics. 133:105302
Aberration-corrected scanning transmission electron microscopy techniques are used to study the bonding configuration between gallium cations and nitrogen anions at defects in metalorganic vapor-phase epitaxy-grown cubic zincblende GaN on vicinal (00
Publikováno v:
Optics & Laser Technology. 157:108662