Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Huinan Guan"'
Publikováno v:
Solid-State Electronics. 48:2199-2206
An analytical model for source side injection programming of E 2 PROM is presented based on two-dimensional analysis on SST SuperFlash cells. Owing to SST cells dual-gate specific configuration and programming bias conditions, two maximum peaks are e
Publikováno v:
IEEE Transactions on Electron Devices. 50:809-815
An analytical model for evaluating the programming efficiency and uniformity of SST SuperFlash cells is developed for the first time. Starting with a two-dimensional electric field analysis, this model calculates the effective hot electron injection-
Publikováno v:
IEEE Electron Device Letters. 21:30-33
Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (/spl Delta/I/sub d/) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (/spl Delta/V/sub fb/)
Publikováno v:
Microwave and Optical Technology Letters. 45:483-485
A novel composite transistor consisting of an inverted transistor parallel-connected to a standard RF power transistor is implemented to improve the linearity of the power amplifier. The inverted transistor facilitates the predistortion and feedback
Publikováno v:
2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).
A novel compact composite power cell design employing the circuit feedback concept between the input and output ports of the power transistor is proposed for realizing high linearity and high efficiency power amplifiers. The RF performance is compare
Autor:
S. Martin, Huinan Guan, M. Matloubian, G. Claudius, G. Compton, Guann-Pyng Li, Sandeep Louis D'Souza
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
In this work, BSIM3 compatible 1/f and RTS noise models have been developed. These new formulations are based upon the effects of band-bending fluctuations associated with single carrier trapping. The new model may be used to determine the oxide trap
Publikováno v:
IEEE Transactions on Electron Devices. Mar2003, Vol. 50 Issue 3, p809. 7p. 3 Black and White Photographs, 1 Diagram, 1 Chart, 7 Graphs.
Publikováno v:
IEEE Compound Semiconductor Integrated Circuit Symposium, 2004; 2004, p45-48, 4p
Publikováno v:
IEEE Electron Device Letters; Jan2000, Vol. 21 Issue 1, p30-33, 4p
Publikováno v:
Microwave & Optical Technology Letters; 6/20/2005, Vol. 45 Issue 6, p483-485, 3p, 1 Diagram, 2 Graphs